A Small-Molecule-Based Ternary Data-Storage Device

2010 ◽  
Vol 132 (16) ◽  
pp. 5542-5543 ◽  
Author(s):  
Hua Li ◽  
Qingfeng Xu ◽  
Najun Li ◽  
Ru Sun ◽  
Jianfeng Ge ◽  
...  
Keyword(s):  
Data Storage ◽  
Small Molecule ◽  
Storage Device ◽  
Ternary Data

Comprehensive understanding of the structure-stacking property correlation to achieve high-performance ternary data-storage devices

2021 ◽  
Vol 5 (7) ◽  
pp. 3176-3183
Author(s):  
Qi-jian Zhang ◽  
Huan Cao ◽  
Jun-yu Shen ◽  
Yang Li ◽  
Jian-mei Lu
Keyword(s):  
Data Storage ◽  
Small Molecule ◽  
High Performance ◽  
Comprehensive Understanding ◽  
Storage Devices ◽  
Property Correlation ◽  
Functional Units ◽  
Ternary Data ◽  
Molecular Stacking

Two small-molecule isomers with consistent functional units exhibit total different molecular stacking modes, rendering the memory behaviours from traditional binary memory to typical ternary memory.

Isomerization change and charge trap double mechanisms induced ternary data storage performance

2021 ◽  
Author(s):  
Huan Cao ◽  
Qijian Zhang ◽  
Hua Li ◽  
Jianmei Lu
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Small Molecule ◽  
Charge Trap ◽  
Storage Performance ◽  
Ternary Data

An azo-based small molecule (NACB) is designed with well-definite film crystallinity, and exhibits three different current states under a continuous electric field, which is owing to the cooperated isomerization change and charge trap mechanisms.

Thermally Stable Ternary Data-Storage Device Based on Twisted Anthraquinone Molecular Design

2012 ◽  
Vol 116 (43) ◽  
pp. 22832-22839 ◽  
Author(s):  
Yuhui Zhang ◽  
Hao Zhuang ◽  
Yong Yang ◽  
Xufeng Xu ◽  
Qing Bao ◽  
...  
Keyword(s):  
Data Storage ◽  
Molecular Design ◽  
Storage Device ◽  
Thermally Stable ◽  
Ternary Data

Effect of a π-spacer between a donor and an acceptor on small molecule-based data-storage device performance

2013 ◽  
Vol 49 (82) ◽  
pp. 9470 ◽  
Author(s):  
Gang Wang ◽  
Shifeng Miao ◽  
Qijian Zhang ◽  
Haifeng Liu ◽  
Hua Li ◽  
...  
Keyword(s):  
Data Storage ◽  
Small Molecule ◽  
Storage Device ◽  
Device Performance

Perangkat keras komputer

2020 ◽  
Author(s):  
Roudati jannah
Keyword(s):  
Data Storage ◽  
Central Processing Unit ◽  
External Memory ◽  
Storage Device ◽  
Input Device ◽  
Processing Unit ◽  
Central Processing ◽  
Output Device

Perangkat keras komputer adalah bagian dari sistem komputer sebagai perangkat yang dapat diraba, dilihat secara fisik, dan bertindak untuk menjalankan instruksi dari perangkat lunak (software). Perangkat keras komputer juga disebut dengan hardware. Hardware berperan secara menyeluruh terhadap kinerja suatu sistem komputer. Prinsipnya sistem komputer selalu memiliki perangkat keras masukan (input/input device system) – perangkat keras premprosesan (processing/central processing unit) – perangkat keras luaran (output/output device system) – perangkat tambahan yang sifatnya opsional (peripheral) dan tempat penyimpanan data (storage device system/external memory).

Perangkat lunak komputer

2020 ◽  
Author(s):  
Intan khadijah simatupang
Keyword(s):  
Data Storage ◽  
Central Processing Unit ◽  
External Memory ◽  
Storage Device ◽  
Input Device ◽  
Processing Unit ◽  
Central Processing ◽  
Output Device

Komputer adalah serangkaian mesin elektronik yang terdiri dari jutaan komponen yang dapat saling bekerja sama, serta membentuk sebuah sistem kerja yang rapi dan teliti. Sistem ini kemudian digunakan untuk dapat melaksanakan pekerjaan secara otomatis, berdasarkan instruksi (program) yang diberikan kepadanya. Istilah Hardware computer atau perangkat keras komputer, merupakan benda yang secara fisik dapat dipegang, dipindahkan dan dilihat. Software komputer atau perangkat lunak komputer merupakan kumpulan instruksi (program/prosedur) untuk dapat melaksanakan pekerjaan secara otomatis dengan cara mengolah atau memproses kumpulan instruksi (data) yang diberikan. Pada prinsipnya sistem komputer selalu memiliki perangkat keras masukan (input/input device system) – perangkat keras pemprosesan (processing/ central processing unit) – perangkat keras keluaran (output/output device system), perangkat tambahan yang sifatnya opsional (peripheral) dan tempat penyimpanan data (Storage device system/external memory).

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device

NANO ◽  
2015 ◽  
Vol 10 (08) ◽  
pp. 1550118 ◽  
Author(s):  
Lei Wang ◽  
Jing Wen ◽  
CiHui Yang ◽  
Shan Gai ◽  
YuanXiu Peng
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Electrical Contact ◽  
Crystal Nucleation ◽  
Access Time ◽  
Storage Device ◽  
Electrical Contact Resistance ◽  
Low Energy Consumption ◽  
Modeling Techniques ◽  
Second Period

Phase-change probe memory using Ge2Sb2Te5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phase-change probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in2 density under pico Joule energy within micro second period.

Electric field-modulated data storage in bilayer InSe

2017 ◽  
Vol 5 (46) ◽  
pp. 12228-12234 ◽  
Author(s):  
Xuhui Yang ◽  
Baisheng Sa ◽  
Hongbing Zhan ◽  
Zhimei Sun
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Storage Device ◽  
Vertical Electric Field

A vertical electric field-modulated data storage device based on bilayer InSe.

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