Interfacial Charge Recombination Between e−−TiO2and the I−/I3−Electrolyte in Ruthenium Heteroleptic Complexes: Dye Molecular Structure−Open Circuit Voltage Relationship

2008 ◽  
Vol 130 (41) ◽  
pp. 13558-13567 ◽  
Author(s):  
Anna Reynal ◽  
Amparo Forneli ◽  
Eugenia Martinez-Ferrero ◽  
Antonio Sánchez-Díaz ◽  
Antón Vidal-Ferran ◽  
...  
2019 ◽  
Vol 7 (15) ◽  
pp. 9025-9033 ◽  
Author(s):  
Jin-Feng Liao ◽  
Wu-Qiang Wu ◽  
Jun-Xing Zhong ◽  
Yong Jiang ◽  
Lianzhou Wang ◽  
...  

A multifunctional 2D polymeric semiconductor was incorporated to provide surprisingly robust efficacy in grain boundary functionalization and defect passivation of perovskite, which suppresses charge recombination and thus affording an illustrious photovoltage of 1.16 V and power conversion efficiency of 21.1%.


Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.


2018 ◽  
Vol 11 (11) ◽  
pp. 3292-3297 ◽  
Author(s):  
Jorge Ávila ◽  
Cristina Momblona ◽  
Pablo Boix ◽  
Michele Sessolo ◽  
Miguel Anaya ◽  
...  

High open circuit voltage solar cells are obtained employing two methyl-ammonium lead iodide absorbers in a monolithic tandem configuration joined by a molecular charge recombination layer.


2017 ◽  
Vol 7 (12) ◽  
pp. 1601995 ◽  
Author(s):  
Guy O. Ngongang Ndjawa ◽  
Kenneth R. Graham ◽  
Sonya Mollinger ◽  
Di M. Wu ◽  
David Hanifi ◽  
...  

2016 ◽  
Vol 18 (5) ◽  
pp. 4045-4050 ◽  
Author(s):  
Huai-Xin Wei ◽  
Feng-Shuo Zu ◽  
Yan-Qing Li ◽  
Wen-Cheng Chen ◽  
Yi Yuan ◽  
...  

Charge transport between HATCN and its neighboring layers plays an important role in efficiency enhancement the same as recombination layers, which was proved by systematic UPS studies.


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