Self-Assembled Chiral Nanofibers from Ultrathin Low-Dimensional Nanomaterials

2015 ◽  
Vol 137 (4) ◽  
pp. 1565-1571 ◽  
Author(s):  
Chaoliang Tan ◽  
Xiaoying Qi ◽  
Zhengdong Liu ◽  
Fei Zhao ◽  
Hai Li ◽  
...  
Keyword(s):  
Self Assembled ◽  
Low Dimensional

Blue-emitting and self-assembled thinner perovskite CsPbBr3 nanoplates: synthesis and formation mechanism

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 9231-9239 ◽  
Author(s):  
Xiaolin Xiao ◽  
Ye Li ◽  
Rong-Jun Xie
Keyword(s):  
Formation Mechanism ◽  
Optoelectronic Properties ◽  
Great Promise ◽  
Size Dependent ◽  
Semiconductor Nanomaterials ◽  
Self Assembled ◽  
Low Dimensional

Low dimensional semiconductor nanomaterials show great promise for a variety of applications due to their size-dependent and excellent optoelectronic properties.

Self-Assembled Low-Dimensional Potassium Structures on GaAs(110)

2004 ◽  
Vol 43 (7B) ◽  
pp. 4557-4560 ◽  
Author(s):  
Nobuyuki Ishida ◽  
Agus Subagyo ◽  
Hirotaka Hosoi ◽  
Kazuhisa Sueoka ◽  
Koichi Mukasa
Keyword(s):  
Self Assembled ◽  
Low Dimensional

OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLED InAs QUANTUM DOT FIELD EFFECT TRANSISTORS

2006 ◽  
Vol 05 (06) ◽  
pp. 721-727
Author(s):  
YUXIN ZENG ◽  
WEI LIU ◽  
FUHUA YANG ◽  
PING XU ◽  
PINGHENG TAN ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Measurement ◽  
Current Voltage ◽  
Scattering Centers ◽  
Self Assembled ◽  
Inas Quantum Dot ◽  
Low Dimensional ◽  
Increasing Temperature

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 μm at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current–voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

Self-assembled low-dimensional nanomaterials via low-temperature plasma processing

2008 ◽  
Vol 516 (19) ◽  
pp. 6609-6615 ◽  
Author(s):  
K. Ostrikov ◽  
I. Levchenko ◽  
S. Xu ◽  
S.Y. Huang ◽  
Q.J. Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Plasma Processing ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Self Assembled ◽  
Low Dimensional

scholarly journals Heteroepitaxy Crystallography in Low Dimensional Nanostructures

2011 ◽  
Vol 172-174 ◽  
pp. 1307-1312 ◽  
Author(s):  
Dong Qiu ◽  
Ming Xing Zhang ◽  
Patrick Kelly
Keyword(s):  
Orientation Relationship ◽  
Growth Mode ◽  
Heteroepitaxial Growth ◽  
Substrate Orientation ◽  
Edge Matching ◽  
Interface Orientation ◽  
Self Assembled ◽  
Low Dimensional ◽  
Natural Preference

Low dimensional nanostructures, e.g. nanowires, self-assembled through heteroepitaxy, present a variety of crystallographic features that do not always follow conventional V-W or S-K growth mode. Applying Δg parallelism rules and edge-to-edge matching (E2EM) model in β-DySi2/Si and CoSi2/Si systems provides a better understanding of the natural preference of the interface orientation and the orientation relationship (OR) during heteroepitaxial growth. This may help improving the quality of nanowires through optimizing the substrate orientation.

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