Aggregation in a High-Mobility n-Type Low-Bandgap Copolymer with Implications on Semicrystalline Morphology

2012 ◽  
Vol 134 (44) ◽  
pp. 18303-18317 ◽  
Author(s):  
Robert Steyrleuthner ◽  
Marcel Schubert ◽  
Ian Howard ◽  
Bastian Klaumünzer ◽  
Kristian Schilling ◽  
...  
Keyword(s):  
High Mobility ◽  
Low Bandgap

A Versatile Low Bandgap Polymer for Air-Stable, High-Mobility Field-Effect Transistors and Efficient Polymer Solar Cells

2011 ◽  
Vol 23 (11) ◽  
pp. 1409-1413 ◽  
Author(s):  
Kok-Haw Ong ◽  
Siew-Lay Lim ◽  
Huei-Shuan Tan ◽  
Hoi-Ka Wong ◽  
Jun Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Polymer Solar Cells ◽  
High Mobility ◽  
Low Bandgap

scholarly journals A High-Mobility Low-Bandgap Poly(2,7-carbazole) Derivative for Photovoltaic Applications

2009 ◽  
Vol 42 (8) ◽  
pp. 2891-2894 ◽  
Author(s):  
Yingping Zou ◽  
David Gendron ◽  
Réda Badrou-Aïch ◽  
Ahmed Najari ◽  
Ye Tao ◽  
...  
Keyword(s):  
High Mobility ◽  
Carbazole Derivative ◽  
Low Bandgap ◽  
Photovoltaic Applications

A Low-Bandgap Diketopyrrolopyrrole-Benzothiadiazole-Based Copolymer for High-Mobility Ambipolar Organic Thin-Film Transistors

2010 ◽  
Vol 22 (47) ◽  
pp. 5409-5413 ◽  
Author(s):  
Prashant Sonar ◽  
Samarendra P. Singh ◽  
Yuning Li ◽  
Mui Siang Soh ◽  
Ananth Dodabalapur
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Bandgap

A High-Mobility Low-Bandgap Copolymer for Efficient Solar Cells

2010 ◽  
Vol 211 (24) ◽  
pp. 2555-2561 ◽  
Author(s):  
Ping Ding ◽  
Cheng-Che Chu ◽  
Bo Liu ◽  
Bo Peng ◽  
Yingping Zou ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Mobility ◽  
Low Bandgap

A TEM study of the effect of oxygen on nanocavity formation and precipitation in rapid - solidified Fe-16Ni-9Cr stainless steels

1994 ◽  
Vol 52 ◽  
pp. 700-701
Author(s):  
S. Wisutmethangoon ◽  
T. F. Kelly ◽  
J.E. Flinn
Keyword(s):  
Stainless Steels ◽  
High Mobility ◽  
Hot Extrusion ◽  
Extrusion Ratio ◽  
Gas Atomization ◽  
Cavity Formation ◽  
Nucleation Sites ◽  
Heat Treated ◽  
Different Types ◽  
Effect Of Oxygen

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si
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