Ligand Field Effect at Oxide–Metal Interface on the Chemical Reactivity of Ultrathin Oxide Film Surface

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In this study, the high-temperature oxidation behavior of a series of AlTiNiCuCox high-entropy alloys (HEAs) was explored. The AlTiNiCuCox (x = 0.5, 0.75, 1.0, 1.25, 1.5) series HEAs were prepared using a vacuum induction melting furnace, in which three kinds of AlTiNiCuCox (x = 0.5, 1.0, 1.5) alloys with different Co contents were oxidized at 800 °C for 100 h, and their oxidation kinetic curves were determined. The microstructure, morphology, structure, and phase composition of the oxide film surface and cross-sectional layers of AlTiNiCuCox series HEAs were analyzed using scanning electron microscopy (SEM), energy-dispersive spectrometry (EDS), and X-ray diffraction (XRD). The influence of Co content on the high-temperature oxidation resistance of the HEAs was discussed, and the oxidation mechanism was summarized. The results indicate that, at 800 °C, the AlTiNiCuCox (x = 0.5, 1.0, 1.5) series HEAs had dense oxide films and certain high-temperature oxidation resistance. With increasing Co content, the high-temperature oxidation resistance of the alloys also increased. With increasing time at high temperature, there was a significant increase in the contents of oxide species and Ti on the oxide film surface. In the process of high-temperature oxidation of AlTiNiCuCox series HEAs, the interfacial reaction, in which metal elements and oxygen in the alloy form ions through direct contact reaction, initially dominated, then the diffusion process gradually became the dominant oxidation factor as ions diffused and were transported in the oxide film.


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