scholarly journals Artificial Construction of the Layered Ruddlesden–Popper Manganite La2Sr2Mn3O10by Reflection High Energy Electron Diffraction Monitored Pulsed Laser Deposition

2012 ◽  
Vol 134 (18) ◽  
pp. 7700-7714 ◽  
Author(s):  
Robert G. Palgrave ◽  
Pavel Borisov ◽  
Matthew S. Dyer ◽  
Sean R. C. McMitchell ◽  
George R. Darling ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Energy Electron ◽  
Laser Deposition ◽  
High Energy Electron

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

Reflection high-energy electron diffraction study of (111) and (001) CdTe grown on (001) GaAs by pulsed laser evaporation and epitaxy

1989 ◽  
Vol 67 (4) ◽  
pp. 343-346 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Williams ◽  
J. M. Wrobel ◽  
P. B. Sewell ◽  
J. LeGeyt ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
Laser Evaporation ◽  
High Energy Electron ◽  
Ion Etching ◽  
Gaas Substrates ◽  
Reconstructed Surface

Reflection high-energy electron diffraction investigations of CdTe films grown on (001) GaAs have been carried out. The films were deposited with a pulsed laser evaporation and epitaxy system which was specially developed in order to grow thin films of AII–BVI compounds. Preparation of (001) GaAs substrates included degreasing in standard solvents, etching in a solution of H2S04–H2O2–H2O, vacuum bakeout, and ion etching. The ion etching was found to be relatively effective in obtaining a partially reconstructed surface of GaAs. The growth of (111) CdTe with [Formula: see text] GaAs took place on such a surface. Deposition on ion cleaned (001) GaAs substrates which did not show surface reconstruction resulted in the growth of (001) CdTe with [Formula: see text] GaAs. For samples thicker than ~1 μm, a (001) CdTe-(2 × 1) structure was observed.

Growth of epitaxial β-FeSi2 thin films by pulsed laser deposition on silicon (111)

1994 ◽  
Vol 9 (11) ◽  
pp. 2733-2736 ◽  
Author(s):  
C.H. Olk ◽  
O. P. Karpenko ◽  
S. M. Yalisove ◽  
G. L. Doll ◽  
J.F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Layer Growth ◽  
Laser Deposition ◽  
Electron Diffraction Data ◽  
Layer By Layer ◽  
Material System ◽  
Epitaxial Relationship

Epitaxial films of semiconducting iron disilicide (β-FeSi2) have been grown by pulsed laser deposition. We find that pulsed laser deposition creates conditions favorable to the formation of films with the smallest geometric misfit possessed by this material system. In situ reflection high energy electron diffraction results indicate a layer by layer growth of the silicide. Analysis of transmission electron diffraction data has determined that the films are single phase and that this growth method reproduces the epitaxial relationship: β-FeSi2 (001) ‖ Si(111).

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