Reflection high-energy electron diffraction study of (111) and (001) CdTe grown on (001) GaAs by pulsed laser evaporation and epitaxy

1989 ◽  
Vol 67 (4) ◽  
pp. 343-346 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Williams ◽  
J. M. Wrobel ◽  
P. B. Sewell ◽  
J. LeGeyt ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
Laser Evaporation ◽  
High Energy Electron ◽  
Ion Etching ◽  
Gaas Substrates ◽  
Reconstructed Surface

Reflection high-energy electron diffraction investigations of CdTe films grown on (001) GaAs have been carried out. The films were deposited with a pulsed laser evaporation and epitaxy system which was specially developed in order to grow thin films of AII–BVI compounds. Preparation of (001) GaAs substrates included degreasing in standard solvents, etching in a solution of H2S04–H2O2–H2O, vacuum bakeout, and ion etching. The ion etching was found to be relatively effective in obtaining a partially reconstructed surface of GaAs. The growth of (111) CdTe with [Formula: see text] GaAs took place on such a surface. Deposition on ion cleaned (001) GaAs substrates which did not show surface reconstruction resulted in the growth of (001) CdTe with [Formula: see text] GaAs. For samples thicker than ~1 μm, a (001) CdTe-(2 × 1) structure was observed.

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

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