Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS6(A = K, Rb, Cs)

2010 ◽  
Vol 132 (15) ◽  
pp. 5348-5350 ◽  
Author(s):  
Santanu Banerjee ◽  
Jodi M. Szarko ◽  
Benjamin D. Yuhas ◽  
Christos D. Malliakas ◽  
Lin X. Chen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emission ◽  
Low Dimensional

ChemInform Abstract: Room Temperature Light Emission from the Low-Dimensional Semiconductors AZrPS6 (A: K, Rb, Cs).

ChemInform ◽  
2010 ◽  
Vol 41 (27) ◽  
pp. no-no
Author(s):  
Santanu Banerjee ◽  
Jodi M. Szarko ◽  
Benjamin D. Yuhas ◽  
Christos D. Malliakas ◽  
Lin X. Chen ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Emission ◽  
Low Dimensional

scholarly journals Transforming Pt-SnO2 Nanoparticles into Pt-SnO2 Composite Nanoceramics for Room-Temperature Hydrogen-Sensing Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2123
Author(s):  
Ming Liu ◽  
Caochuang Wang ◽  
Pengcheng Li ◽  
Liang Cheng ◽  
Yongming Hu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Sintering Temperature ◽  
Sno2 Nanoparticles ◽  
Hydrogen Sensing ◽  
Sensing Applications ◽  
Nanostructured Metal Oxides ◽  
Low Dimensional ◽  
Sensing Characteristics ◽  
Nanostructured Metal

Many low-dimensional nanostructured metal oxides (MOXs) with impressive room-temperature gas-sensing characteristics have been synthesized, yet transforming them into relatively robust bulk materials has been quite neglected. Pt-decorated SnO2 nanoparticles with 0.25–2.5 wt% Pt were prepared, and highly attractive room-temperature hydrogen-sensing characteristics were observed for them all through pressing them into pellets. Some pressed pellets were further sintered over a wide temperature range of 600–1200 °C. Though the room-temperature hydrogen-sensing characteristics were greatly degraded in many samples after sintering, those samples with 0.25 wt% Pt and sintered at 800 °C exhibited impressive room-temperature hydrogen-sensing characteristics comparable to those of their counterparts of as-pressed pellets. The variation of room-temperature hydrogen-sensing characteristics among the samples was explained by the facts that the connectivity between SnO2 grains increases with increasing sintering temperature, and Pt promotes oxidation of SnO2 at high temperatures. These results clearly demonstrate that some low-dimensional MOX nanocrystals can be successfully transformed into bulk MOXs with improved robustness and comparable room-temperature gas-sensing characteristics.

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2

1999 ◽  
Vol 588 ◽  
Author(s):  
Y. Ohno ◽  
S. Takeda
Keyword(s):  
Optical Property ◽  
Light Emission ◽  
Polarized Light ◽  
Structural Data ◽  
Luminescence Spectra ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Tem Method ◽  
Low Dimensional ◽  
First Time

AbstractWe have developed an apparatus for polarized cathodoluminescence (CL) spectroscopy combined with transmission electron microscopy (TEM), that enables us to obtain simultaneously structural data in higher spatial resolution by TEM and polarized luminescence spectra by CL of the same microscopic area. The polarized-CL/TEM method is very useful to study the optical properties of low-dimensional microstructures in semiconducting materials. We have applied the method to examine the optical property of antiphase boundaries in CuPt-ordered GaInP2 and found, for the first time, the polarized light emission from the APBs whose habit planes are parallel to the (T11) and (1T0) atomic planes.

Electrically driven light emission from single colloidal quantum dots at room temperature

2007 ◽  
Vol 90 (2) ◽  
pp. 023110 ◽  
Author(s):  
Hao Huang ◽  
August Dorn ◽  
Vladimir Bulovic ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Colloidal Quantum Dots

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

A Self-powered and Sensitive Terahertz Photodetection based on PdSe2

2022 ◽  
Author(s):  
Jie Zhou ◽  
Xueyan Wang ◽  
Zhiqingzi Chen ◽  
Libo Zhang ◽  
Chengyu Yao ◽  
...  
Keyword(s):  
Homeland Security ◽  
Room Temperature ◽  
Performance Enhancement ◽  
Rapid Development ◽  
Rapid Response ◽  
Medical Sciences ◽  
Terahertz Detection ◽  
Order Of Magnitude ◽  
Self Powered ◽  
Low Dimensional

Abstract With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology and medical sciences, communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe2). An order of magnitude performance enhancement was observed in photodetection based on PdSe2/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1 THz and 0.3 THz irradiation, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1 THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe2 in terms of air-stable, suitable sensitivity, and speed, which may have great application in terahertz detection.

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