Ligand-Localized Electron Trapping at Sensitized Semiconductor Interfaces

2002 ◽  
Vol 124 (33) ◽  
pp. 9690-9691 ◽  
Author(s):  
Paul G. Hoertz ◽  
David W. Thompson ◽  
Lee A. Friedman ◽  
Gerald J. Meyer
Keyword(s):  
Electron Trapping ◽  
Semiconductor Interfaces

An atomic-resolution microscope study of Al contracts on GaAs

1986 ◽  
Vol 44 ◽  
pp. 726-727
Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
High Speed ◽  
Schottky Contacts ◽  
Detailed Knowledge ◽  
The Past ◽  
Semiconductor Interfaces ◽  
Deposited Metal ◽  
Microwave Applications ◽  
Free Interfaces ◽  
Potential Use

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions

High-resolution z-contrast imaging of semiconductor interfaces

1989 ◽  
Vol 47 ◽  
pp. 468-469
Author(s):  
S. J. Pennycook
Keyword(s):  
High Resolution ◽  
Phase Contrast ◽  
Contrast Imaging ◽  
Compositional Modulation ◽  
Semiconductor Interfaces ◽  
Complex Figure ◽  
Thin Region ◽  
Stem Image ◽  
Annular Detector ◽  
Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

Effect of Long Term Stress on Hot Electron Trapping

1981 ◽  
Vol 20 (S1) ◽  
pp. 255 ◽  
Author(s):  
Heihachi Matsumoto ◽  
Kokichi Sawada ◽  
Sotoju Asai ◽  
Makoto Hirayama ◽  
Koichi Nagasawa
Keyword(s):  
Electron Trapping ◽  
Hot Electron

Theoretical analysis of magnetically switched transparency in planar semiconductor interfaces

2021 ◽  
Vol 118 (2) ◽  
pp. 021104
Author(s):  
Kil-Song Song ◽  
Song-Jin Im ◽  
Ji-Song Pae ◽  
Chol-Song Ri ◽  
Kum-Song Ho ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Semiconductor Interfaces

scholarly journals Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1581
Author(s):  
José C. Conesa
Keyword(s):  
Significant Problem ◽  
Band Offsets ◽  
Semiconductor Interfaces ◽  
Hartree Potential ◽  
Hybrid Functionals

Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at interfaces between two semiconductors, are analyzed in the present work. These methods are compared using several very different semiconductor pairs, and the conclusions about the advantages of each method are discussed. Overall, the alternating slabs method is recommended in those cases where epitaxial mismatch does not represent a significant problem.

Electron trapping in ferroelectric HfZrO4 and Al- and Si-doped layers

2021 ◽  
pp. 108066
Author(s):  
R.A. Izmailov ◽  
B.J. O'Sullivan ◽  
M. Popovici ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Trapping ◽  
Si Doped

scholarly journals Nanolayer boron-semiconductor interfaces and their device applications

2021 ◽  
pp. 108041
Author(s):  
Lis K. Nanver ◽  
Lin Qi ◽  
Xingyu Liu ◽  
Tihomir Knežević
Keyword(s):  
Semiconductor Interfaces ◽  
Device Applications
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