HYDROGEN PEROXIDE. VII. THE DIELECTRIC CONSTANTS, REFRACTIVE INDICES AND IONIZING POWER OF HYDROGEN PEROXIDE AND ITS AQUEOUS SOLUTIONS

1930 ◽  
Vol 52 (2) ◽  
pp. 489-499 ◽  
Author(s):  
A. C. Cuthbertson ◽  
O. Maass
1943 ◽  
Vol 21b (8) ◽  
pp. 156-162 ◽  
Author(s):  
Paul A. Giguère

The refractive indices of aqueous solutions of hydrogen peroxide for the C-, F-, and G-lines of hydrogen and the sodium D-line have been measured over the whole range of concentration at four temperatures: 16°, 20°, 24°, and 28 °C. The results obtained with the hydrogen lines are somewhat different from those of Cuthbertson and Maass. A possible explanation of this discrepancy is given. By extrapolation it was found that for pure hydrogen peroxide nD = 1.4087 at 20°, a value in good agreement with previous determinations. The refractive index affords a rapid and fairly accurate method for determining the concentration of solutions of hydrogen peroxide.


1992 ◽  
Vol 33 (5) ◽  
pp. 389-393 ◽  
Author(s):  
R.R. Reddy ◽  
S. Anjaneyulu ◽  
T.V.R. Rao

1970 ◽  
Vol 48 (18) ◽  
pp. 2948-2948
Author(s):  
C. E. Burchill ◽  
I. S. Ginns

not available


1979 ◽  
Vol 18 (7) ◽  
pp. 1971-1973 ◽  
Author(s):  
Mark M. Morrison ◽  
Julian L Roberts ◽  
Donald T. Sawyer

1955 ◽  
Vol 3 (4) ◽  
pp. 379 ◽  
Author(s):  
W. V. Mayneord ◽  
W. Anderson ◽  
H. D. Evans ◽  
D. Rosen

2010 ◽  
Vol 184 (1-3) ◽  
pp. 308-312 ◽  
Author(s):  
Dongkyu Choi ◽  
O-Mi Lee ◽  
Seungho Yu ◽  
Seung-Woo Jeong

2012 ◽  
Vol 217-219 ◽  
pp. 1141-1145 ◽  
Author(s):  
Wei Wang ◽  
Li Juan Zhao ◽  
Ping Xin Song ◽  
Ying Jiu Zhang

Assisted by Ag nanoparticles, Si substrates were etched in aqueous solutions containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with different volumes of etching solution. The etching morphology of Si wafers was found to be affected by the volumes. In etching solutions with smaller volume, the pores were created; in etching solutions with larger volume, the nanostructure composed of nanowires and nanopores (pores+wires nanostructure) were generated. In addition, the lengths of these Si nanostructures increased with the increase of the etching volume. Possible formation mechanism for this phenomenon was discussed.


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