Augmented silicon-carbon bond strengths via d-.sigma. hyperconjugation

1975 ◽  
Vol 97 (13) ◽  
pp. 3680-3682 ◽  
Author(s):  
Phillip D. Mollere ◽  
Roald Hoffmann
Keyword(s):  
Carbon Bond ◽  
Silicon Carbon ◽  
Bond Strengths

scholarly journals Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene

2014 ◽  
Vol 113 (11) ◽  
Author(s):  
Toma Susi ◽  
Jani Kotakoski ◽  
Demie Kepaptsoglou ◽  
Clemens Mangler ◽  
Tracy C. Lovejoy ◽  
...  
Keyword(s):  
Carbon Bond ◽  
Silicon Carbon

Electrophilic Cleavage of One Silicon–Carbon Bond of Pentacoordinate Tetraorganosilanes: Synthesis of Silalactones

2004 ◽  
Vol 116 (1) ◽  
pp. 106-108 ◽  
Author(s):  
Mitsuru Shindo ◽  
Kenji Matsumoto ◽  
Kozo Shishido
Keyword(s):  
Carbon Bond ◽  
Silicon Carbon

Kinetics of Plasmon-Driven Hydrosilylation of Silicon Surfaces: Photogenerated Charges Drive Silicon- Carbon Bond Formation

2021 ◽  
Author(s):  
Chengcheng Rao ◽  
Brian Olsen ◽  
Erik Luber ◽  
Jillian Buriak
Keyword(s):  
Green Light ◽  
Kinetic Studies ◽  
Silicon Surfaces ◽  
Moderate Intensity ◽  
Carbon Bond ◽  
Silicon Carbon ◽  
Set Up ◽  
Kinetics Of ◽  
Insight Into

Optically transparent PDMS stamps coated with a layer of gold nanoparticles were employed as plasmonic stamps to drive surface chemistry on silicon surfaces. Illumination of a sandwich of plasmonic stamps, an alkene ink, and hydride-terminated silicon with green light of moderate intensity drives hydrosilylation on the surface. The key to the mechanism of the hydrosilylation is the presence of holes at the Si-H-terminated interface, which is followed by attack by a proximal alkene and formation of the silicon-carbon bond. In this work, detailed kinetic studies of the hydrosilylation on silicon with different doping levels, n++, p++, n, p, and intrinsic were carried out to provide further insight into the role of the metal-insulator-semiconductor (MIS) junction that is set up during the stamping.

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