Charge-transfer spectra of some phenyl and naphthyl derivatives. Relative importance of .sigma.-.pi. and n-.pi. conjugation involving the .pi. silicon-silicon system

1974 ◽  
Vol 96 (3) ◽  
pp. 791-794 ◽  
Author(s):  
Hideki Sakurai ◽  
Mitsuo Kira
Keyword(s):  
Charge Transfer ◽  
Relative Importance ◽  
Silicon System ◽  
Pi Conjugation ◽  
Silicon Silicon

Changes in properties of a 〈porous silicon〉/silicon system during gradual etching off of the porous silicon layer

2002 ◽  
Vol 36 (3) ◽  
pp. 330-335 ◽  
Author(s):  
E. F. Venger ◽  
T. Ya. Gorbach ◽  
S. I. Kirillova ◽  
V. E. Primachenko ◽  
V. A. Chernobai
Keyword(s):  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon System ◽  
Silicon Silicon

Blocking effect of charge transfer at the porous silicon/silicon interface

1997 ◽  
Vol 70 (20) ◽  
pp. 2705-2707 ◽  
Author(s):  
Th. Dittrich ◽  
J. Rappich ◽  
V. Yu. Timoshenko
Keyword(s):  
Charge Transfer ◽  
Porous Silicon ◽  
Blocking Effect ◽  
Silicon Interface ◽  
Silicon Silicon

STUDIES OF THE SPIN-HAMILTONIAN PARAMETERS AND DEFECT STRUCTURES FOR Cu2+ IONS IN AgCl and NaCl CRYSTALS FROM A TWO-MECHANISM MODEL

2010 ◽  
Vol 24 (18) ◽  
pp. 3619-3625 ◽  
Author(s):  
YANG MEI ◽  
WEN-CHEN ZHENG ◽  
LV HE
Keyword(s):  
Charge Transfer ◽  
Excited States ◽  
Relative Importance ◽  
Defect Structures ◽  
Spin Hamiltonian ◽  
Mechanism Model ◽  
Octahedral Clusters ◽  
Structure Constants ◽  
Hamiltonian Parameters ◽  
Metal Ligand

In this paper, based on a two-mechanism model, we derive the complete high-order perturbation formulas of the spin-Hamiltonian (SH) parameters (g factors g‖, g⊥ and hyperfine structure constants A‖, A⊥) for 3d9 ions in tetragonally elongated octahedral clusters. In the model, the contributions to SH parameters due to the crystal-field (CF) mechanism related to CF excited states and the charge-transfer (CT) mechanism related to CT exacted states (the CT mechanism is neglected in CF theory, which is widely used to study the SH parameters) are taken into account. From these formulas, the SH parameters of Cu 2+ ions in AgCl and NaCl crystals are calculated. It is found that for the exact explanation of SH parameters of ( CuCl 6)4- clusters in crystals, the contribution due to CT mechanism should be considered. The relative importance of CT mechanism (characterized by Q CT /Q CF , where Q = Δgi or [Formula: see text], i = ‖ or ⊥) increases with the decreasing metal-ligand distance in ( CuCl 6)4- clusters. The causes are discussed. The signs of Ai and the defect structures of Cu 2+ centers in AgCl and NaCl crystals are suggested from the calculations.

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