Structural characterization of gas-phase complexes of alkanes, alkenes, and carbon monoxide with the atomic iron ion

1984 ◽  
Vol 106 (7) ◽  
pp. 1912-1922 ◽  
Author(s):  
Barbara S. Larsen ◽  
D. P. Ridge
Keyword(s):  
Carbon Monoxide ◽  
Gas Phase ◽  
Structural Characterization ◽  
Iron Ion

scholarly journals Structural characterization of holo- and apo-myoglobin in the gas phase by ultraviolet photodissociation mass spectrometry

2015 ◽  
Vol 6 (2) ◽  
pp. 1324-1333 ◽  
Author(s):  
Michael B. Cammarata ◽  
Jennifer S. Brodbelt
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Structural Characterization ◽  
Ultraviolet Photodissociation ◽  
193 Nm

193 nm UV photodissociation of myoglobin in the gas phase showed preferential backbone cleavages in regions with higher relative B-factors.

scholarly journals Structural characterization of nucleotide 5′-triphosphates by infrared ion spectroscopy and theoretical studies

2018 ◽  
Vol 20 (44) ◽  
pp. 28319-28330 ◽  
Author(s):  
Rianne E. van Outersterp ◽  
Jonathan Martens ◽  
Giel Berden ◽  
Jeffrey D. Steill ◽  
Jos Oomens ◽  
...  
Keyword(s):  
Gas Phase ◽  
Structural Properties ◽  
Structural Characterization ◽  
Spectroscopic Studies ◽  
Theoretical Studies ◽  
Ion Spectroscopy ◽  
Ir Spectroscopic

Gas-phase IR spectroscopic studies and supporting theoretical studies have been performed on adenosine 5′-triphosphate, cytosine 5′-triphosphate and guanosine 5′-triphosphate to elucidate the structural properties of the NTPs by focusing on the influence of the nucleobase and the extent of deprotonation.

Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane

2013 ◽  
Vol 740-742 ◽  
pp. 291-294 ◽  
Author(s):  
Matteo Bosi ◽  
Giovanni Attolini ◽  
Béla Pécz ◽  
Zsolt Zolnai ◽  
László Dobos ◽  
...  
Keyword(s):  
Residual Stress ◽  
Gas Phase ◽  
Structural Characterization ◽  
Amorphous Content ◽  
Si Substrates

3C-SiC layers were grown on Si substrates using standard precursors (SiH4and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.

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