cis-Diaquabis(2,2'-bipyridyl-4,4'-dicarboxylate)ruthenium(II) sensitizes wide band gap oxide semiconductors very efficiently over a broad spectral range in the visible

1988 ◽  
Vol 110 (11) ◽  
pp. 3686-3687 ◽  
Author(s):  
Paul. Liska ◽  
Nick. Vlachopoulos ◽  
Mohammad K. Nazeeruddin ◽  
Pascal. Comte ◽  
Michael. Graetzel
Keyword(s):  
Band Gap ◽  
Spectral Range ◽  
Wide Band ◽  
Wide Band Gap ◽  
Oxide Semiconductors ◽  
Broad Spectral Range

Modification of Wide-Band-Gap Oxide Semiconductors with Cobalt Hydroxide Nanoclusters for Visible-Light Water Oxidation

2016 ◽  
Vol 128 (29) ◽  
pp. 8449-8453 ◽  
Author(s):  
Kazuhiko Maeda ◽  
Koki Ishimaki ◽  
Yuki Tokunaga ◽  
Daling Lu ◽  
Miharu Eguchi
Keyword(s):  
Visible Light ◽  
Band Gap ◽  
Water Oxidation ◽  
Wide Band ◽  
Cobalt Hydroxide ◽  
Wide Band Gap ◽  
Oxide Semiconductors ◽  
Light Water

Modification of Wide-Band-Gap Oxide Semiconductors with Cobalt Hydroxide Nanoclusters for Visible-Light Water Oxidation

2016 ◽  
Vol 55 (29) ◽  
pp. 8309-8313 ◽  
Author(s):  
Kazuhiko Maeda ◽  
Koki Ishimaki ◽  
Yuki Tokunaga ◽  
Daling Lu ◽  
Miharu Eguchi
Keyword(s):  
Visible Light ◽  
Band Gap ◽  
Water Oxidation ◽  
Wide Band ◽  
Cobalt Hydroxide ◽  
Wide Band Gap ◽  
Oxide Semiconductors ◽  
Light Water

Improving visible-light photoresponse characteristics of ZnO phototransistor via solution processable Li dopants

2021 ◽  
Author(s):  
Jun Hyung Jeong ◽  
Sungho Park ◽  
Byung Jun Kim ◽  
Su Been Heo ◽  
Tae Yeon Kim ◽  
...  
Keyword(s):  
Visible Light ◽  
Band Gap ◽  
Ultraviolet Light ◽  
Wide Band ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Wide Band Gap ◽  
Oxide Semiconductors ◽  
Solution Processable

The wide band gap of oxide semiconductors enables them to generate photocurrents through irradiation with high-energy photons, such as ultraviolet light. To enhance the photoresponsivity of an oxide semiconductor to...

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications
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