Improving visible-light photoresponse characteristics of ZnO phototransistor via solution processable Li dopants

Author(s):  
Jun Hyung Jeong ◽  
Sungho Park ◽  
Byung Jun Kim ◽  
Su Been Heo ◽  
Tae Yeon Kim ◽  
...  

The wide band gap of oxide semiconductors enables them to generate photocurrents through irradiation with high-energy photons, such as ultraviolet light. To enhance the photoresponsivity of an oxide semiconductor to...

2016 ◽  
Vol 128 (29) ◽  
pp. 8449-8453 ◽  
Author(s):  
Kazuhiko Maeda ◽  
Koki Ishimaki ◽  
Yuki Tokunaga ◽  
Daling Lu ◽  
Miharu Eguchi

2016 ◽  
Vol 55 (29) ◽  
pp. 8309-8313 ◽  
Author(s):  
Kazuhiko Maeda ◽  
Koki Ishimaki ◽  
Yuki Tokunaga ◽  
Daling Lu ◽  
Miharu Eguchi

2019 ◽  
Vol 4 (29) ◽  
pp. 8460-8469 ◽  
Author(s):  
Li Peng ◽  
Yang Xiao ◽  
Xiao‐li Wang ◽  
Da‐wei Feng ◽  
Hui Yu ◽  
...  

2020 ◽  
Vol 44 (22) ◽  
pp. 9238-9247
Author(s):  
Xin Ji ◽  
Yong Guo ◽  
Shugui Hua ◽  
Huiyan Li ◽  
Sunchen Zhang

In this paper, the sensitization photodegradation of single and mixed dyes by wide band gap boron nitride (BN, 3.94 eV) under visible light irradiation has been investigated for the first time.


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