Borane Cluster Photochemistry. 3. The Photochemistry and Organometallic Rearrangement Chemistry of .sigma.-Metalated Small Borane Cluster Compounds

1995 ◽  
Vol 117 (47) ◽  
pp. 11754-11761 ◽  
Author(s):  
Bruce H. Goodreau ◽  
Lianna R. Orlando ◽  
James T. Spencer
1991 ◽  
Vol 250 ◽  
Author(s):  
Shreyas Kher ◽  
James T. Spencer

AbstractSeveral borane cluster compounds, such as pentaborane(9) and their corresponding metal complexes have been investigated in our laboratory for their utility as unique source materials for synthesizing metal/metal boride thin films by MOCVD. In this paper we report the preparation of thin films of nickel boride from the thermal decomposition of nido- pentaborane( 9) in the presence of anhydrous nickel chloride [NiCl2] in the vapor phase. Crystalline nickel boride thin films of controlled composition ranging from 0.1 to several microns have been readily prepared by controlling the temperature and the flow rate of the pentaborane(9) into the reaction chamber. The nickel boride films on GaAs were thermally annealed to form the Ni7B3 phase as hexagonal crystals in a Ni3B matrix. These films have been characterized by AA, AES, EDXA, SEM, XRD and electron diffraction. The phases were determined primarily by X-ray and electron diffraction experiments.


1990 ◽  
Vol 204 ◽  
Author(s):  
John A. Glass ◽  
Shreyas Kher ◽  
Stephen D. Hersee ◽  
G. Ramseyer ◽  
James T. Spencer

ABSTRACTThe preparation of aluminum-containing thin film materials by MOCVD and MOMBE for use in III-V semiconductor materials, such as HEMT devices, is currently under active investigation. The preparation of uniform, conformal aluminum and boron containing thin film materials from the chemical vapor deposition (CVD) of aluminum borane cluster precursor compounds has been studied. A variety of substrates, deposition conditions and aluminaborane precursors have been explored and their effect on film composition, growth rate and thin film morphology has been investigated. The thermal depositions of aluminum and boron-containing thin films from aluminum borohydride, AI(BH4)3, on copper, SiO2 and GaAs are reported. Boron incorporation in the films vary depending on substrate temperature, aluminaborane flow and the presence or absence of a H2 carrier. These films have been characterized by SEM, AES and XES.


2013 ◽  
Vol 32 (8) ◽  
pp. 2416-2426 ◽  
Author(s):  
Richard D. Adams ◽  
Mingwei Chen ◽  
Gaya Elpitiya ◽  
Xinzheng Yang ◽  
Qiang Zhang

2019 ◽  
Vol 48 (12) ◽  
pp. 3831-3834 ◽  
Author(s):  
Lars Preißing ◽  
Claudio Schrenk ◽  
Andreas Schnepf

The reaction of GeCl2·dioxane with KFeCp(CO)2 leads to polyhedral cluster compounds with six germanium atoms like Ge6[FeCp(CO)2]6 or Ge6Cl2[FeCp(CO)2]6via a complex reaction route.


2020 ◽  
Vol 646 (19) ◽  
pp. 1650-1654
Author(s):  
Arin‐Daniel Fuhrmann ◽  
Florian Pachel ◽  
Markus Ströbele ◽  
David Enseling ◽  
Thomas Jüstel ◽  
...  

Gold Bulletin ◽  
1984 ◽  
Vol 17 (1) ◽  
pp. 5-12 ◽  
Author(s):  
D. Michael P. Mingos

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