Small heteroborane cluster systems. 4. The photochemistry and organometallic rearrangement chemistry of small phosphorus-bridged borane cluster compounds: the sequential loss of boron vertices from small metallaboranes

1992 ◽  
Vol 114 (10) ◽  
pp. 3827-3835 ◽  
Author(s):  
Bruce H. Goodreau ◽  
Lianna R. Orlando ◽  
James T. Spencer
Keyword(s):  
Cluster Compounds ◽  
Cluster Systems ◽  
Sequential Loss ◽  
Borane Cluster

The Chemical Vapor Deposoitin of Pure Nickel and Nickel Boride Thin Films from Borane Cluster Compounds

1991 ◽  
Vol 250 ◽  
Author(s):  
Shreyas Kher ◽  
James T. Spencer
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Chemical Vapor ◽  
Nickel Chloride ◽  
Reaction Chamber ◽  
Cluster Compounds ◽  
Nickel Boride ◽  
Metal Metal ◽  
Unique Source ◽  
Borane Cluster

AbstractSeveral borane cluster compounds, such as pentaborane(9) and their corresponding metal complexes have been investigated in our laboratory for their utility as unique source materials for synthesizing metal/metal boride thin films by MOCVD. In this paper we report the preparation of thin films of nickel boride from the thermal decomposition of nido- pentaborane( 9) in the presence of anhydrous nickel chloride [NiCl2] in the vapor phase. Crystalline nickel boride thin films of controlled composition ranging from 0.1 to several microns have been readily prepared by controlling the temperature and the flow rate of the pentaborane(9) into the reaction chamber. The nickel boride films on GaAs were thermally annealed to form the Ni7B3 phase as hexagonal crystals in a Ni3B matrix. These films have been characterized by AA, AES, EDXA, SEM, XRD and electron diffraction. The phases were determined primarily by X-ray and electron diffraction experiments.

The Deposition of Aluminum and Aluminum Boride Thin Films by Aluminaborane Cluster Compounds

1990 ◽  
Vol 204 ◽  
Author(s):  
John A. Glass ◽  
Shreyas Kher ◽  
Stephen D. Hersee ◽  
G. Ramseyer ◽  
James T. Spencer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cluster Compounds ◽  
Semiconductor Materials ◽  
Aluminum Boride ◽  
Borane Cluster ◽  
Active Investigation ◽  
Deposition Conditions

ABSTRACTThe preparation of aluminum-containing thin film materials by MOCVD and MOMBE for use in III-V semiconductor materials, such as HEMT devices, is currently under active investigation. The preparation of uniform, conformal aluminum and boron containing thin film materials from the chemical vapor deposition (CVD) of aluminum borane cluster precursor compounds has been studied. A variety of substrates, deposition conditions and aluminaborane precursors have been explored and their effect on film composition, growth rate and thin film morphology has been investigated. The thermal depositions of aluminum and boron-containing thin films from aluminum borohydride, AI(BH4)3, on copper, SiO2 and GaAs are reported. Boron incorporation in the films vary depending on substrate temperature, aluminaborane flow and the presence or absence of a H2 carrier. These films have been characterized by SEM, AES and XES.

Heteronukleare Clustersysteme, X (CO)9Co3M(CO)2(η-C5H6) (M = Mo, W) — Synthese, Eigenschaften und Struktur von Molybdän- und Wolfram-haltigen Trikobaltnonacarbonyl-Clustern / Heteronuclear Cluster Systems, X (CO)9Co3M(CO)2(η-C5H5) (M = Mo, W) — Synthesis, Properties and Structure of Molybdenum and Tungsten Containing Tricobaltnonacarbonyl Clusters

1977 ◽  
Vol 32 (11) ◽  
pp. 1277-1283 ◽  
Author(s):  
Günter Schmid ◽  
Klaus Bartl ◽  
Roland Boese
Keyword(s):  
Spectroscopic Data ◽  
Cluster Compounds ◽  
Cluster Systems ◽  
X Ray ◽  
H Nmr ◽  
Synthesis Properties ◽  
Heteronuclear Cluster ◽  
And Tungsten

The synthesis of (CO)3(η-C5H5)M—Co(CO)4 and the cluster-compounds(CO)9Co3M(CO)2(η-C5H5) (M = Mo, W)is described. IR, 1H—NMR and mass spectroscopic data are discussed. The structure of (CO)9Co3Mo(CO)2(η-C5H5) was solved by X-ray analysis.

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