The Effect of D2O on the Thermal Stability of Proteins. Thermodynamic Parameters for the Transfer of Model Compounds from H2O to D2O1,2

1965 ◽  
Vol 69 (9) ◽  
pp. 3132-3144 ◽  
Author(s):  
Gordon C. Kresheck ◽  
Henry Schneider ◽  
Harold A. Scheraga
Keyword(s):  
Thermal Stability ◽  
Thermodynamic Parameters ◽  
Model Compounds ◽  
Thermal Stability Of

The relative thermal stability of polymer model compounds

1962 ◽  
Vol 6 (19) ◽  
pp. 47-56 ◽  
Author(s):  
Desmond Sheehan ◽  
Alan P. Bentz ◽  
John C. Petropoulos
Keyword(s):  
Thermal Stability ◽  
Polymer Model ◽  
Model Compounds ◽  
Relative Thermal Stability ◽  
Thermal Stability Of

Thermal stability of lignin in ground pulp (GP) and the effect of lignin modification on GP’s thermal stability: TGA experiments with dimeric lignin model compounds and milled wood lignins

Holzforschung ◽  
2019 ◽  
Vol 73 (5) ◽  
pp. 493-499 ◽  
Author(s):  
Daisuke Ando ◽  
Fumiaki Nakatsubo ◽  
Hiroyuki Yano
Keyword(s):  
Thermal Stability ◽  
Model Compound ◽  
Pinus Densiflora ◽  
Wood Fiber ◽  
Model Compounds ◽  
Lignin Model Compounds ◽  
Oh Groups ◽  
Lignin Model Compound ◽  
Lignin Model ◽  
Thermal Stability Of

Abstract For ground pulp (GP) utilization in wood fiber composites as reinforced material, its thermal behavior is relevant. The contribution of lignin to thermal performance of GP from Pinus densiflora was the focus of the present study. Dimeric lignin model compounds and isolated milled wood lignins (MWLs) from three sources were submitted for thermogravimetric analysis (TGA). The temperatures leading to 1% weight loss (T per 1% WL) for the material were determined. The thermal stability of β-O-4 models was the lowest. Among the MWLs, the abaca MWL with its high β-O-4 content was the least thermostable. An acetylated nonphenolic β-O-4 lignin model compound showed that acetylation improves the thermal stability of this type of dimeric models. The acetylation of benzylic OH groups in β-O-4 linkages is especially relevant for the thermal resistance, which was also shown based on pre-acetylated benzylic OH groups in the GP before the total acetylation.

Kinetic and Thermodynamic Study of Plantaricin IIA-1A5, a Bacteriocin Produced by Indonesian Probiotic Lactobacillus plantarum IIA-1A5

2020 ◽  
Vol 27 ◽  
Author(s):  
Muhamad Arifin ◽  
Cahyo Budiman ◽  
Kazuhito Fujiyama ◽  
Irma Isnafia Arief
Keyword(s):  
Thermal Stability ◽  
Thermodynamic Parameters ◽  
Lactobacillus Plantarum ◽  
Thermal Inactivation ◽  
Heating Temperature ◽  
Wide Spectrum ◽  
Exchange Chromatography ◽  
K Value ◽  
Thermal Stability Of ◽  
D Value

Background:: Plantaricin IIA-1A5 is a bacteriocin produced by Lactobacillus plantarum IIA-1A5, a locally isolat-ed probiotic from Indonesia. Plantaricin IIA-1A5 exhibits antibacterial activity against wide spectrum of pathogenic bacte-ria, thus promising to be applied in various food products. Nevertheless, thermal stability of this bacteriocin remains to be fully investigated. Objective:: This study aims to determine thermal stability of plantaricin IIA-1A5 through kinetic and thermodynamic param-eters. Method:: To address, plantaricin IIA-1A5 was purified from Lactobacillus plantarum IIA-1A5, which was growth under whey media, using ammonium sulfate precipitation followed by ion-exchange chromatography. Purified plantaricin IIA-IA5 was then subjected to analysis of its bacteriocin activity. The thermal inactivation of bacteriocin from L. plantarum IIA-1A5 was calculated by incubating the bacteriocin at different temperatures ranging from 60-80 °C for 30 to 90 min, which was then used to calculate its kinetic and thermodynamic parameters. Results:: The result showed the inactivation rates (k-value) were ranging from 0.008 to 0.013 min-1. Heat resistance of plantaricin IIA-1A5 (D-value) at constant heating temperature of 60, 65, 70, 75, and 80 °C were 311.6, 305.9, 294.5, 198.9, and 180.2 min, which indicated a faster inactivation at higher temperatures. D-value sensitivity for temperature changes (z-value) was calculated to be 75.76 °C. Further, thermodynamic analysis suggested that plantaricin IIA-1A5 is thermostable, with activation energy (Ea) of 29.02 kJ mol-1. Conclusion:: This result showed that plantaricin IIA-1A5 is considerably more heat-stable than plantaricin members and promises to be applied in food industries where heat treatments are applied. Furthermore, a possible mechanism by which plantaricin IIA-1A5 maintains its stability was also discussed by referring to its thermodynamic parameters.

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Sign in / Sign up

Export Citation Format

Share Document