Dielectric measurements with time-domain reflectometry when large conductivities are involved

1971 ◽  
Vol 75 (9) ◽  
pp. 1323-1324 ◽  
Author(s):  
M. J. C. Van Gemert
Keyword(s):  
Time Domain ◽  
Time Domain Reflectometry ◽  
Dielectric Measurements

scholarly journals Application of electric polarization to contaminant detection in soils

1989 ◽  
Vol 26 (4) ◽  
pp. 536-550 ◽  
Author(s):  
Raymond N. Yong ◽  
Edward J. Hoppe
Keyword(s):  
Contaminant Transport ◽  
Time Domain ◽  
Mineral Exploration ◽  
Electric Polarization ◽  
Induced Polarization ◽  
Time Domain Reflectometry ◽  
Dielectric Measurements ◽  
Polarization Method ◽  
Contaminant Detection ◽  
Nonpolar Liquids

Preliminary experiments indicate the feasibility of constructing for field use a contaminant-detection instrumentation based on dielectric measurements. This study applies the technique of time-domain reflectometry to assess characteristic "signatures" of some selected contaminants and soil–contaminant mixtures. The results imply that a proper differentiation between various signatures can be attained, allowing an assessment in regard to soil–contaminant status. The proposed technique is similar in principle to the induced-polarization method applied in mineral exploration. Key words: electric polarization, contaminant transport, dielectrics, induced polarization, nonpolar liquids, time-domain reflectometry, relaxation, contaminant–soil interaction.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

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