Raman line width study of rotational motion of cyclohexane in aqueous solution

1982 ◽  
Vol 86 (3) ◽  
pp. 319-321 ◽  
Author(s):  
Kazutoshi Tanabe
Keyword(s):  
Aqueous Solution ◽  
Raman Line ◽  
Line Width ◽  
Rotational Motion

The Raman Spectra and Conformational Change of Simple Sodium Alkylsulfates and Sodium Alkyisulfonates in Aqueous Solution

1983 ◽  
Vol 38 (9) ◽  
pp. 1046-1047 ◽  
Author(s):  
Teruki Ikeda ◽  
Tadayoshi Yoshida ◽  
Hirofumi Okabayashi
Keyword(s):  
Aqueous Solution ◽  
Concentration Dependence ◽  
Raman Spectra ◽  
Raman Line ◽  
Polar Group ◽  
Group Effect ◽  
Trans Form ◽  
Molecular Conformations ◽  
Sodium Alkylsulfates ◽  
Single Bonds

Abstract In order to study the polar group effect upon conformations about CH2-CH2 single bonds, the Raman spectra of simple sodium alkylsulfates and sodium alkyisulfonates were measured. The ethylsulfate ion (CH3-CH2-O-SO3-) in aqueous solution was found to take the trans form about the CH2 - O bond in 0.67-5.41 mol/1. For the n-propylsulfonate ion the Raman line due to the gauche form about the CH2 -CH2 bond was also observed, the trans form becoming predominant at higher concentrations. For the sulfate and sulfonate ions having butyl and hexyl chains, the concentration dependence of their molecular conformations was also investigated.

A New Approach to Explain Concentration-Dependent Changes of Isotropic Raman Line Width in the Associated Binary Mixtures

2006 ◽  
Vol 110 (32) ◽  
pp. 9849-9853 ◽  
Author(s):  
Animesh K. Ojha ◽  
Sunil K. Srivastava ◽  
Ranjan K. Singh ◽  
B. P. Asthana
Keyword(s):  
Binary Mixtures ◽  
Raman Line ◽  
Line Width ◽  
New Approach

scholarly journals Radiation Defect-Induced Lattice Contraction of InP

1986 ◽  
Vol 74 ◽  
Author(s):  
C. R. Wie ◽  
T. Jones ◽  
T. A. Tombrello ◽  
T. Vreeland ◽  
F. Xiong ◽  
...  
Keyword(s):  
Raman Line ◽  
Line Width ◽  
Radiation Defect ◽  
Lattice Spacing ◽  
Lattice Strain ◽  
Line Shift ◽  
Lattice Contraction ◽  
Recovery Stage

AbstractWe studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behaviors of lattice strain, Raman line shift, and linewidth. The lattice spacing for the planes parallel to the surface decreases as a result of irradiation, and amounts to a strain of −0.061% for (100) face, −0.056% for (110) face, and −0.050% for (111) face for 15 MeV Cl bombarded samples to a dose of 1.25E15 ions/cm2. The negative lattice strain, Raman line shift, and line width completely recover at 450°C, and show a major recovery stage at 250°C – 350°C.

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