Photoluminescence and impedance study of p-gallium arsenide/electrolyte interfaces under cathodic bias: evidence for flat-band potential shift during illumination and introduction of high-density surface states by platinum treatment

1989 ◽  
Vol 93 (17) ◽  
pp. 6521-6526 ◽  
Author(s):  
Kohei Uosaki ◽  
Yasuyuki Shigematsu ◽  
Susumu Kaneko ◽  
Hideaki Kita
Keyword(s):  
Gallium Arsenide ◽  
Surface States ◽  
High Density ◽  
Flat Band ◽  
Flat Band Potential ◽  
Potential Shift ◽  
Impedance Study ◽  
Density Surface

Influence of Surface States on the Evaluation of the Flat Band Potential of TiO2

2014 ◽  
Vol 6 (4) ◽  
pp. 2401-2406 ◽  
Author(s):  
Hao Ge ◽  
Hui Tian ◽  
Yangen Zhou ◽  
Shuyao Wu ◽  
Daliang Liu ◽  
...  
Keyword(s):  
Surface States ◽  
Flat Band ◽  
Flat Band Potential

GaAs electrolyte electroreflectance: low-field spectra and flat-band potential shift measurements

1991 ◽  
Vol 245 (3) ◽  
pp. A143
Author(s):  
P. Salvador ◽  
Y. González Diez ◽  
L. González Soto
Keyword(s):  
Flat Band ◽  
Flat Band Potential ◽  
Potential Shift ◽  
Low Field

Interpreting interfacial semiconductor–liquid capacitive characteristics impacted by surface states: a theoretical and experimental study of CuGaS2

2020 ◽  
Vol 22 (35) ◽  
pp. 19631-19642
Author(s):  
Botong Miao ◽  
Kassoum Sangaré ◽  
Asif Iqbal ◽  
Benoît Marsan ◽  
Kirk H. Bevan
Keyword(s):  
Experimental Study ◽  
Doping Concentration ◽  
Surface States ◽  
Flat Band ◽  
Flat Band Potential ◽  
First Order

A first-order approach is presented to estimate the doping concentration and flat band potential of a semiconductor photoanode subject to surface states.

GaAs electrolyte electroreflectance: low-field spectra and flat-band potential shift measurements

1991 ◽  
Vol 245 (3) ◽  
pp. 324-332 ◽  
Author(s):  
P. Salvador ◽  
Y.González Diez ◽  
L.González Soto
Keyword(s):  
Flat Band ◽  
Flat Band Potential ◽  
Potential Shift ◽  
Low Field
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