Influence of Surface States on the Evaluation of the Flat Band Potential of TiO2

2014 ◽  
Vol 6 (4) ◽  
pp. 2401-2406 ◽  
Author(s):  
Hao Ge ◽  
Hui Tian ◽  
Yangen Zhou ◽  
Shuyao Wu ◽  
Daliang Liu ◽  
...  
2020 ◽  
Vol 22 (35) ◽  
pp. 19631-19642
Author(s):  
Botong Miao ◽  
Kassoum Sangaré ◽  
Asif Iqbal ◽  
Benoît Marsan ◽  
Kirk H. Bevan

A first-order approach is presented to estimate the doping concentration and flat band potential of a semiconductor photoanode subject to surface states.


1988 ◽  
Vol 110 (1) ◽  
pp. 293-299 ◽  
Author(s):  
R. Srivastava ◽  
V. M. Pathak ◽  
V. V. Rao

1989 ◽  
Vol 67 (3) ◽  
pp. 382-388 ◽  
Author(s):  
O. Savadogo

Modification of several semiconductors material surfaces with H4SiW12O40•nH2O have been carried out to produce an increase in the open circuit photopotential at the semiconductor/electrolyte interface (Voc) without changing the flat-band potential. The augmentation of Voc is shown to be attributed to a decrease of the minority carriers recombination at the semiconductor/electrolyte interface along with the suppression of Fermi level pinning. The enhancement of Voc and the electrocatalytic activity of the hydrogen evolution reaction in acidic medium of the derivatized electrodes is attributed to the Fermi level unpinning. Keywords: photoelectrodes, photoelectrocatalysis, pinning, modification improvement.


2018 ◽  
Vol 2 (9) ◽  
pp. 2053-2059 ◽  
Author(s):  
Xiaorong Liang ◽  
Jiale Xie ◽  
Jinyun Xiong ◽  
Liangping Gong ◽  
Chang Ming Li

A FeCoW multimetal oxide-coated W:BiVO4 photoanode performs a 3.8 times photocurrent and a negative shift of the flat-band potential by 280 mV in comparison to a W:BiVO4 photoanode.


1983 ◽  
Vol 28 (8) ◽  
pp. 1063-1066 ◽  
Author(s):  
Maheshwar Sharon ◽  
Ashwani Sinha

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