Rate and product measurements for the reactions of hydroxyl with molecular iodine and iodine chloride at 298 K: separation of gas-phase and surface reaction components

1985 ◽  
Vol 89 (25) ◽  
pp. 5371-5379 ◽  
Author(s):  
Lee M. Loewenstein ◽  
James G. Anderson
Keyword(s):  
Gas Phase ◽  
Surface Reaction ◽  
Molecular Iodine ◽  
Iodine Chloride

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

Molecular iodine adsorption within Hofmann-type structures M(L)[M′(CN)4] (M = Ni, Co; M′ = Ni, Pd, Pt): impact of their composition

2015 ◽  
Vol 44 (44) ◽  
pp. 19357-19369 ◽  
Author(s):  
Giovanni Massasso ◽  
María Rodríguez-Castillo ◽  
Jérôme Long ◽  
Julien Haines ◽  
Sabine Devautour-Vinot ◽  
...  
Keyword(s):  
Gas Phase ◽  
Molecular Iodine ◽  
Iodine Adsorption

Hofmann-type clathrate frameworks MII(pz)[M′II(CN)4] are able to efficiently and reversibly capture iodine in the gas phase and in solution.

An all-gas-phase amine based iodine laser using molecular iodine as atomic iodine donor

2010 ◽  
Vol 485 (4-6) ◽  
pp. 296-298 ◽  
Author(s):  
Taizo Masuda ◽  
Tomonari Nakamura ◽  
Masamori Endo
Keyword(s):  
Gas Phase ◽  
Molecular Iodine ◽  
Iodine Laser ◽  
Atomic Iodine

The thermal decomposition of cyclobutane-1,2-dione

1985 ◽  
Vol 63 (11) ◽  
pp. 2945-2948 ◽  
Author(s):  
J.-R. Cao ◽  
R. A. Back
Keyword(s):  
Activation Energy ◽  
Thermal Decomposition ◽  
Vapor Pressure ◽  
Gas Phase ◽  
Rate Constant ◽  
Surface Reaction ◽  
Order Rate Constant ◽  
Reaction Vessel ◽  
Arrhenius Parameters ◽  
First Order

The thermal decomposition of cyclobutane-1,2-dione has been studied in the gas phase at temperatures from 120 to 250 °C and pressures from 0.2 to 1.5 Torr. Products were C2H4 + 2CO, apparently formed in a simple unimolecular process. The first-order rate constant was strongly pressure dependent, and values of k∞ were obtained by extrapolation of plots of 1/k vs. 1/p to1/p = 0. Experiments in a packed reaction vessel showed that the reaction was enhanced by surface at the lower temperatures. Arrhenius parameters for k∞, corrected for surface reaction, were log A (s−1) = 15.07(±0.3) and E = 39.3(±2) kcal/mol. This activation energy seems too low for a biradical mechanism, and it is suggested that the decomposition is probably a concerted process. The vapor pressure of solid cyclobutane-1,2-dione was measured at temperatures from 22 to 62 °C and a heat of sublimation of 13.1 kcal/mol was estimated.

A Study on CVD TaN as a Diffusion Barrier for Cu Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Se-Joon Im ◽  
Soo-Hyun Kim ◽  
Ki-Chul Park ◽  
Sung-Lae Cho ◽  
Ki-Bum Kim
Keyword(s):  
Activation Energy ◽  
Gas Phase ◽  
Diffusion Barrier ◽  
Surface Reaction ◽  
Film Growth ◽  
Ion Beam ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
X Ray

AbstractTantalum nitride (TaN) films were deposited using pentakis-diethylamido-tantalum [PDEAT, Ta(N(C2H5)2)5] as a precursor. During film growth, N- and Ar-ion beams with an energy of 120 eV were supplied in order to improve the film quality. In case of thermallydecomposed films, the deposition rate is controlled by the surface reaction up to about 350 °C with an activation energy of about 1.07 eV. The activation energy of the surface reaction controlled regime is decreased to 0.26 eV when the Ar-beam is applied. However, in case of Nbeam bombarded films, the deposition is controlled by the precursor diffusion in gas phase at the whole temperature range. By using Ar-beam, the resistivity of the film is drastically reduced from approximately 10000 µω-cm to 600 µω-cm and the density of the film is increased from 5.85 g/cm3 to 8.26 g/cm3, as compared with thermally-decomposed film. The use of N-beam also considerably lowers the resistivity of films (∼ 800 µω-cm) and increases the density of the films (7.5 g/cm3). Finally, the diffusion barrier properties of 50-nm-thick TaN films for Cu were investigated aftre annealing by X-ray diffraction analysis. The films deposited using N- and Arbeam showed the Cu3Si formation after annealing at 650 °C for 1 hour, while thermallydecomposed films showed Cu3Si peaks firstly after annealing at 600 °C. It is considered that the improvements of the diffusion barrier performance of the films deposited using N- and Ar-ion beam are the consequence of the film densification resulting from the ion bombardment during film growth.

Development of Detailed Surface Reaction Database for TWC Based on Gas Phase and Surface Species Analyses

2017 ◽  
Vol 2017.9 (0) ◽  
pp. A309
Author(s):  
Daisuke Shimokuri ◽  
Hiroshi Murakami ◽  
Yuhei Matsumoto ◽  
Satoshi Hinokuma ◽  
Naoki Ishimoto ◽  
...  
Keyword(s):  
Gas Phase ◽  
Surface Reaction ◽  
Surface Species ◽  
Detailed Surface
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