Kinetics of some gas-phase elementary reactions of boron monofluoride

1985 ◽  
Vol 89 (23) ◽  
pp. 5066-5074 ◽  
Author(s):  
G. C. Light ◽  
R. R. Herm ◽  
J. H. Matsumoto
1999 ◽  
Vol 584 ◽  
Author(s):  
Carlo Cavallotti ◽  
Valeria Bertani ◽  
Maurizio Masi ◽  
Sergio Carrà

AbstractThe kinetics of deposition of CdTe, ZnS and ZnSe films was studied. An overall microkinetically reversible kinetic scheme consisting of elementary reactions, comprehensive of gas phase and surface processes was developed. Kinetic constants of gas phase reactions were either found in the literature or determined through quantum chemistry methods. Kinetic constants of surface reactions were first guessed combining kinetic theory with quantum chemical calculations and then their values were refined to reproduce experimental data. The kinetics schemes so developed were tested through the simulation of deposition reactors. Measured growth rates and gas phase compositions were thus compared with those calculated. The major finding of this studies is that the growth of CdTe, ZnS and ZnSe can be represented adopting a surface kinetic scheme constituted essentially by the same fundamental steps.


2017 ◽  
Vol 19 (5) ◽  
pp. 3826-3836 ◽  
Author(s):  
Goran Kovačević ◽  
Branko Pivac

Reactions that take place in silane–ammonia plasma are analysed in detail. These reactions are of fundamental importance since they are the elementary reactions for forming the silicon–nitrogen bond. These results not only explain kinetics of gas phase reactions, but also reactions that are responsible for the growth of silicon nitride, an industrially important material.


1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.


2021 ◽  
Vol 125 (10) ◽  
pp. 2069-2076
Author(s):  
Brendan C. Sweeny ◽  
David C. McDonald ◽  
Nicholas S. Shuman ◽  
Albert A. Viggiano ◽  
Juergen Troe ◽  
...  

2006 ◽  
Vol 19 (12) ◽  
pp. 836-840 ◽  
Author(s):  
Rafael Añez ◽  
Rodolfo Izquierdo ◽  
Alba Vidal ◽  
Tania Cordova ◽  
Aníbal Sierraalta ◽  
...  

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