scholarly journals Reactions in silicon–nitrogen plasma

2017 ◽  
Vol 19 (5) ◽  
pp. 3826-3836 ◽  
Author(s):  
Goran Kovačević ◽  
Branko Pivac
Keyword(s):  
Silicon Nitride ◽  
Gas Phase ◽  
Nitrogen Plasma ◽  
Fundamental Importance ◽  
Gas Phase Reactions ◽  
Elementary Reactions ◽  
Important Material ◽  
Ammonia Plasma ◽  
Kinetics Of ◽  
Nitrogen Bond

Reactions that take place in silane–ammonia plasma are analysed in detail. These reactions are of fundamental importance since they are the elementary reactions for forming the silicon–nitrogen bond. These results not only explain kinetics of gas phase reactions, but also reactions that are responsible for the growth of silicon nitride, an industrially important material.

Realization of Detailed Kinetic Models for the Growth of II-VI Compounds: Adopting DFT Calculations and Experimental Evidences

1999 ◽  
Vol 584 ◽  
Author(s):  
Carlo Cavallotti ◽  
Valeria Bertani ◽  
Maurizio Masi ◽  
Sergio Carrà
Keyword(s):  
Experimental Data ◽  
Kinetic Theory ◽  
Gas Phase ◽  
Quantum Chemical ◽  
Kinetic Scheme ◽  
Kinetic Constants ◽  
Surface Processes ◽  
Gas Phase Reactions ◽  
Elementary Reactions ◽  
Kinetics Of

AbstractThe kinetics of deposition of CdTe, ZnS and ZnSe films was studied. An overall microkinetically reversible kinetic scheme consisting of elementary reactions, comprehensive of gas phase and surface processes was developed. Kinetic constants of gas phase reactions were either found in the literature or determined through quantum chemistry methods. Kinetic constants of surface reactions were first guessed combining kinetic theory with quantum chemical calculations and then their values were refined to reproduce experimental data. The kinetics schemes so developed were tested through the simulation of deposition reactors. Measured growth rates and gas phase compositions were thus compared with those calculated. The major finding of this studies is that the growth of CdTe, ZnS and ZnSe can be represented adopting a surface kinetic scheme constituted essentially by the same fundamental steps.

Atmospheric chemistry of trans-CF3CHCHCl: Kinetics of the gas-phase reactions with Cl atoms, OH radicals, and O3

2008 ◽  
Vol 199 (1) ◽  
pp. 92-97 ◽  
Author(s):  
M.P. Sulbaek Andersen ◽  
E.J.K. Nilsson ◽  
O.J. Nielsen ◽  
M.S. Johnson ◽  
M.D. Hurley ◽  
...  
Keyword(s):  
Gas Phase ◽  
Atmospheric Chemistry ◽  
Oh Radicals ◽  
Gas Phase Reactions ◽  
Kinetics Of ◽  
Cl Atoms

Kinetics of the Gas-Phase Reactions of OH and NO3Radicals with Dimethylphenols

2004 ◽  
Vol 108 (50) ◽  
pp. 11019-11025 ◽  
Author(s):  
Lars P. Thüner ◽  
Perla Bardini ◽  
Gerard J. Rea ◽  
John C. Wenger
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions ◽  
Kinetics Of

scholarly journals Barriometry – an enhanced database of accurate barrier heights for gas-phase reactions

2018 ◽  
Vol 20 (16) ◽  
pp. 10732-10740 ◽  
Author(s):  
Bun Chan ◽  
John M. Simmie
Keyword(s):  
Gas Phase ◽  
Accurate Determination ◽  
Gas Phase Reactions ◽  
Barrier Heights ◽  
High Level ◽  
Kinetics Of

The kinetics of many reactions are critically dependent upon the barrier heights for which accurate determination can be difficult. More than 100 accurate barriers are obtained with the high-level W3X-L composite procedure.

ChemInform Abstract: KINETICS OF THE GAS PHASE REACTIONS OF (+)-TRANS-2,3-DIVINYLOXIRANE

1974 ◽  
Vol 5 (13) ◽  
Author(s):  
ROBERT J. CRAWFORD ◽  
VESNA VUKOV ◽  
HIROKAZU TOKUNAGA
Keyword(s):  
Gas Phase ◽  
Gas Phase Reactions ◽  
Kinetics Of

The Role of Starting Potential in the Kinetics of Chemical Reactions under Electrodeless Discharge

1970 ◽  
Vol 25 (11) ◽  
pp. 1772
Author(s):  
T.S.R Ao ◽  
A. Patil
Keyword(s):  
Gas Phase ◽  
Chemical Reactions ◽  
Electric Discharge ◽  
Specific Rate ◽  
Gas Phase Reactions ◽  
Electrodeless Discharge ◽  
First Order ◽  
Kinetics Of

Abstract It has been shown that in kinetically first order gas phase reactions occuring under electric discharge, such as the decomposition of N2O, the application, at various initial pressures, of the same multiple of the respective starting potential ensures that the reaction occurs at the same specific rate.

Kinetics of the gas-phase reactions of cyclo-CF2CFXCHXCHX - (X = H, F, Cl) with OH radicals at 253-328 K

2009 ◽  
Vol 41 (8) ◽  
pp. 532-542 ◽  
Author(s):  
L. Chen ◽  
T. Uchimaru ◽  
J. Mizukado ◽  
S. Kutsuna ◽  
K. Tokuhashi ◽  
...  
Keyword(s):  
Gas Phase ◽  
Oh Radicals ◽  
Gas Phase Reactions ◽  
Kinetics Of
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