Rotational quantum number and vibronic symmetry of nitrogen dioxide excited with visible light in the region of 563-566 nm: optical-optical double resonance measurement and spin-orbit interaction between 2B2 and 2A2 vibronic states

1993 ◽  
Vol 97 (35) ◽  
pp. 8889-8894 ◽  
Author(s):  
Kaoru Aoki ◽  
Hidekazu Nagai ◽  
Kennosuke Hoshina ◽  
Kazuhiko Shibuya
Keyword(s):  
Visible Light ◽  
Nitrogen Dioxide ◽  
Quantum Number ◽  
Double Resonance ◽  
Rotational Quantum Number ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Resonance Measurement ◽  
Optical Double Resonance ◽  
Vibronic States

Millimeter‐wave optical double resonance spectra of NO2: How good a quantum number is N?

1986 ◽  
Vol 85 (8) ◽  
pp. 4297-4303 ◽  
Author(s):  
Stephen L. Coy ◽  
Kevin K. Lehmann ◽  
Frank C. De Lucia
Keyword(s):  
Quantum Number ◽  
Millimeter Wave ◽  
Double Resonance ◽  
Optical Double Resonance

scholarly journals Optical–Optical Double Resonance Spectroscopy of NO2 in the 590.1 nm Region

1994 ◽  
Vol 14 (1-3) ◽  
pp. 119-129
Author(s):  
Kazuhiko Shibuya ◽  
Tadasi Kusumoto ◽  
Hidekazu Nagai
Keyword(s):  
Excited States ◽  
Ground State ◽  
Double Resonance ◽  
Resonance Spectroscopy ◽  
Spin Orbit ◽  
Mixed States ◽  
Optical Double Resonance ◽  
Orbital Rotation ◽  
Double Resonance Spectroscopy ◽  
Available Information

Optical–optical double resonance (OODR) spectroscopy has been applied to the rotational and vibronic analysis of the thirty nine eigenstates of NO2 existing in the energy region of 16,980–17,124 cm-1 above the ground state. These excited states are concluded to be the mixed states of NO2 generated by spin-orbit and/or orbital-rotation interaction between the B2 and A1 vibronic levels. The mixing mechanism of the excited states is discussed in terms of available information on the visible excited states of NO2.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry
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