Near-field scanning optical spectroscopy: spatially resolved spectra of microcrystals and nanoaggregates in doped polymers

1993 ◽  
Vol 97 (13) ◽  
pp. 3091-3094 ◽  
Author(s):  
Duane Birnbaum ◽  
Seong Keun Kook ◽  
Raoul Kopelman
1992 ◽  
Vol 290 ◽  
Author(s):  
Duane Birnbaum ◽  
Seong-Keun Kook ◽  
Raoul Kopelman

AbstractNear-field optics techniques make it possible to by-pass the optical diffraction limit (“uncertainty principle) and attain spatial resolution of λ/50 or better. We present near-field scanning optical spectroscopy (NSOS) data on α and ß mixed micro-crystals of perylene and on various aggregates of tetracene doped into PMMA. The spatial resolution is limited by the size of the scanning photon tip and its distance from the sample. We use nanofabricated optical fiber tips (aluminum coated) that are as small as 100 nm. These can be piezoelectrically scanned close to the sample. Fluorescence spectra easily differentiate between adjoining microcrystallites of α and β perylene, giving spectra identical with those of large (>1 cm) single crystals. The apparently homogeneous molecularly doped polymer samples of tetracene/PMMA have regions that fluoresce anywhere between green and red. Thus the spatially resolved spectra are much sharper and more detailed than the broad and featureless bulk spectra. The different emission spectra are attributed to different aggregates of the tetracene guest embedded in the PMMA host


2016 ◽  
Author(s):  
A. M. Mintairov ◽  
J. Kapaldo ◽  
J. L. Merz ◽  
S. Rouvimov ◽  
N. Kalyygniy ◽  
...  

1997 ◽  
Vol 36 (Part 2, No. 7B) ◽  
pp. L896-L898 ◽  
Author(s):  
Nobuo Saito ◽  
Fumio Sato ◽  
Kuniharu Takizawa ◽  
Jun-ichi Kusano ◽  
Hideyo Okumura ◽  
...  

1994 ◽  
Vol 64 (11) ◽  
pp. 1421-1423 ◽  
Author(s):  
Robert D. Grober ◽  
Timothy D. Harris ◽  
Jay K. Trautman ◽  
Eric Betzig ◽  
Werner Wegscheider ◽  
...  

1995 ◽  
Vol 405 ◽  
Author(s):  
Jutong Liu ◽  
T. F. Kuech

AbstractWe have achieved spatially resolved room temperature photoluminescence (PL) from MOVPE GaAs (001) surfaces by Near-Field Scanning Optical Microscopy (NSOM). The PL intensity variation was related to the change of surface state density. Using this technique, the uniformity of surface passivation after (NH 4)2S treatment has been studied. We have performed the topography, reflection and PL measurements by NSOM as well as the topography measurements by Atomic Force Microscopy (AFM) on the as grown, etched and sulfur passivated GaAs samples. The uniformity of GaAs with a thin Al0 65Ga0.35As cap layer has also been studied and compared with the (NH 4)2S treatment. We found the sub-micron scale variations in PL intensity which were not correlated to the topographic features. Theoretical modeling has been used to obtain semi-quantitative analysis of the experimental results.


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