Morphological Evolution of Chloroaluminum Phthalocyanine Thin Films Followed in situ by Atomic Force Microscopy

1995 ◽  
Vol 99 (47) ◽  
pp. 17198-17206 ◽  
Author(s):  
F. Santerre ◽  
R. Cote ◽  
G. Lalande ◽  
L. Gastonguay ◽  
D. Guay ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Morphological Evolution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chloroaluminum Phthalocyanine

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

Kinetics of Surface Phase Separation for PMMA/SAN Thin Films Studied by in Situ Atomic Force Microscopy

2005 ◽  
Vol 38 (2) ◽  
pp. 211-215 ◽  
Author(s):  
Yonggui Liao ◽  
Zhaohui Su ◽  
Xianggui Ye ◽  
Yunqi Li ◽  
Jichun You ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Phase Separation ◽  
Surface Phase ◽  
Force Microscopy ◽  
Atomic Force ◽  
Kinetics Of

Measuring Thickness Changes in Thin Films Due to Chemical Reaction by Monitoring the Surface Roughness with In Situ Atomic Force Microscopy

2002 ◽  
Vol 8 (5) ◽  
pp. 422-428 ◽  
Author(s):  
L.Y. Beaulieu ◽  
A.D. Rutenberg ◽  
J.R. Dahn
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Alloy Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Direct Proportionality ◽  
Roughness Measurements

Measuring the changing thickness of a thin film, without a reference, using an atomic force microscope (AFM) is problematic. Here, we report a method for measuring film thickness based on in situ monitoring of surface roughness of films as their thickness changes. For example, in situ AFM roughness measurements have been performed on alloy film electrodes on rigid substrates as they react with lithium electrochemically. The addition (or removal) of lithium to (or from) the alloy causes the latter to expand (or contract) reversibly in the direction perpendicular to the substrate and, in principle, the change in the overall height of these materials is directly proportional to the change in roughness. If the substrate on which the film is deposited is not perfectly smooth, a correction to the direct proportionality is needed and this is also discussed.

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