Temperature Dependence of the Gas Phase Reaction Rates of CF3O with Methane, Ethane, and Isobutane

1995 ◽  
Vol 99 (41) ◽  
pp. 15102-15107 ◽  
Author(s):  
C. Bourbon ◽  
C. Fittschen ◽  
J. P. Sawerysyn ◽  
P. Devolder
Keyword(s):  
Temperature Dependence ◽  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction

SiC HTCVD Simulation Modified by Sublimation Etching

2006 ◽  
Vol 527-529 ◽  
pp. 107-110 ◽  
Author(s):  
Yasuo Kito ◽  
Emi Makino ◽  
Kei Ikeda ◽  
Masao Nagakubo ◽  
Shoichi Onda
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Reaction Model ◽  
Inductive Heating ◽  
Present Calculation ◽  
Quasi Equilibrium ◽  
Phase Reaction ◽  
Vapor Pressures ◽  
Gas Phase Reaction ◽  
Sticking Coefficients

High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A vertical cylindrical reactor was used in an RF inductive heating furnace and the temperature was more than 2200. SiH4 and C3H8 were used as source gases and H2 as carrier gas. A gas phase reaction model from the literature was used on the condition that the gas phase reaction is a quasi-equilibrium state. It was found that the major species were Si, Si2C, SiC2 and C2H2 in the gas phase reaction model as well as in the thermodynamic equilibrium calculation. Sublimation etching was considered in the surface reaction rates by modifying partial pressures of species with equilibrium vapor pressures. CFD-ACE+ and MALT2 software packages were used in the present calculation. The sticking coefficients were determined by fitting the calculated growth rates to the experimental ones. The simulated growth rate in a different reactor is in good agreement with the experimental value, using the same sticking coefficients. The present simulation could be useful to design a new reactor and to find optimum conditions.

scholarly journals Temperature dependence of rate coefficients for the gas phase reaction of OH with 3-chloropropene. A theoretical and experimental study

2020 ◽  
Vol 755 ◽  
pp. 137757
Author(s):  
Mariela Aguilera Sammaritano ◽  
Mauro González Vera ◽  
Pablo Marcelo Cometto ◽  
Tatiane Nicola Tejero ◽  
Glauco F. Bauerfeldt ◽  
...  
Keyword(s):  
Experimental Study ◽  
Temperature Dependence ◽  
Gas Phase ◽  
Rate Coefficients ◽  
Phase Reaction ◽  
Gas Phase Reaction

Gas‐Phase Reaction Rates of Some Positive Ions with Water at 296°K

1970 ◽  
Vol 53 (9) ◽  
pp. 3745-3751 ◽  
Author(s):  
Carleton J. Howard ◽  
Howard W. Rundle ◽  
Frederick Kaufman
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Positive Ions

Pressure and Temperature Dependence of the Gas-Phase Reaction of SO3with H2O and the Heterogeneous Reaction of SO3with H2O/H2SO4Surfaces

1997 ◽  
Vol 101 (51) ◽  
pp. 10000-10011 ◽  
Author(s):  
John T. Jayne ◽  
Ulrich Pöschl ◽  
Yu-min Chen ◽  
David Dai ◽  
Luisa T. Molina ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Gas Phase ◽  
Heterogeneous Reaction ◽  
Phase Reaction ◽  
Gas Phase Reaction

Pressure and temperature dependence of the gas-phase reaction of silylene with dimethyl ether

2001 ◽  
Vol 3 (15) ◽  
pp. 3085-3094 ◽  
Author(s):  
Ula N. Alexander ◽  
Keith D. King ◽  
Warren D. Lawrance
Keyword(s):  
Temperature Dependence ◽  
Gas Phase ◽  
Dimethyl Ether ◽  
Phase Reaction ◽  
Gas Phase Reaction
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