Effect of Impurity on the Lateral Crystal Growth of l-Alanine: A Combined Simulation and Experimental Study

2012 ◽  
Vol 51 (45) ◽  
pp. 14845-14849 ◽  
Author(s):  
Xiangyu Yang ◽  
Gang Qian ◽  
Xuezhi Duan ◽  
Xinggui Zhou
Keyword(s):  
Experimental Study ◽  
Crystal Growth ◽  
Lateral Crystal ◽  
Combined Simulation

A numerical and experimental study of natural convection and interface shape in crystal growth

1997 ◽  
Vol 173 (3-4) ◽  
pp. 492-502 ◽  
Author(s):  
G.H. Yeoh ◽  
G. de Vahl Davis ◽  
E. Leonardi ◽  
H.C. de Groh ◽  
M. Yao
Keyword(s):  
Experimental Study ◽  
Crystal Growth ◽  
Natural Convection ◽  
Interface Shape

Experimental study of bubble generation during β-BaB2O4 single crystal growth

2007 ◽  
Vol 42 (2) ◽  
pp. 133-137 ◽  
Author(s):  
X. H. Pan ◽  
W. Q. Jin ◽  
F. Ai ◽  
Y. Liu ◽  
Y. Hong
Keyword(s):  
Experimental Study ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Bubble Generation

On the lateral crystal growth of laser irradiated NiTi thin films

2009 ◽  
Vol 94 (26) ◽  
pp. 261908 ◽  
Author(s):  
A. J. Birnbaum ◽  
Y. Lawrence Yao ◽  
U.-J. Chung ◽  
James. S. Im ◽  
X. Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Lateral Crystal

Experimental study on the ibuprofen crystal growth morphology in solution

2001 ◽  
Vol 224 (3-4) ◽  
pp. 335-341 ◽  
Author(s):  
H Cano ◽  
N Gabas ◽  
J.P Canselier
Keyword(s):  
Experimental Study ◽  
Crystal Growth ◽  
Growth Morphology

Computational and experimental study of thermal fields in Czochralski garnet crystal growth

2005 ◽  
Vol 275 (1-2) ◽  
pp. e121-e128 ◽  
Author(s):  
V.P. Ginkin ◽  
V.I. Folomeev ◽  
O.M. Naumenko ◽  
Yu.M. Papin ◽  
E.V. Zharikov
Keyword(s):  
Experimental Study ◽  
Crystal Growth ◽  
Garnet Crystal ◽  
Thermal Fields

Advanced Lateral Crystal Growth of a-Si Thin Films by Double-Pulsed Irradiation of All Solid-State Lasers

2003 ◽  
Vol 762 ◽  
Author(s):  
Toshio Kudo ◽  
Koji Seike ◽  
Kazunori Yamazaki ◽  
Hirohito Komori ◽  
Sachi Yawaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Solid State ◽  
Short Axis ◽  
Scanning Direction ◽  
Complete Melting ◽  
Melting Region ◽  
Scanning Step ◽  
Lateral Crystal ◽  
Line Beam

AbstractA compact annealing machine with all solid-state green lasers has been developed, which has the advantage of widely adjustable solidification rate through the delay time control of two long pulses (pulse width ~100ns). Advanced lateral crystal growth (ALCG) process has been proved by the double-pulsed all solid-state laser annealing. The laser beam has a line shape 0.1mm wide and 17mm long, and the beam profile on the short axis is quasi-Gaussian (FWHM 0.1mm). Scanning the line beam along the short axis at the 86% overlapping ratio, the lateral crystal growth area of width 14μm, parallel to the long axis, is sequentially formed at the pitch of 14μm towards the scanning direction. The advanced lateral growth mechanism is easily explained as follows: (1) At the first irradiation, twin seed lines of width 4μm, parallel to the long axis, generates at a boundary between a near-complete melting region and a complete melting region. (2) At the second irradiation of scanning step 14μm, the front seed line in the scanning direction grows symmetrically toward both sides. (3) At the third irradiation of scanning step 2x14μm, the seeds laterally grow until stopped by the growing of seeds on both sides. Finally the ALCG process by the scanning line-beam technique like the current ELA enables us to produce the laterally grown Si thin-films sequentially arranging the belt-shaped texture at the pitch of 14μm. The quality of the laterally grown Si films is quite well except for the projections generated by the bump of lateral growing seeds.

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