Emission wavelength independence of the excitation polarization of tris(bipyridine)ruthenium(2+)

1988 ◽  
Vol 27 (3) ◽  
pp. 589-590 ◽  
Author(s):  
R. L. Blakley ◽  
M. L. Myrick ◽  
M. K. DeArmond
Keyword(s):  
Emission Wavelength

Investigating the Effect of Ag and Au Nanostructures with Spherical and Rod Shapes on the Emission Wavelength of OLED

Plasmonics ◽  
2021 ◽  
Author(s):  
Fatemeh Abbasi ◽  
Seyed Mohammad Bagher Ghorashi ◽  
Elmira Karimzadeh ◽  
Hosein Zabolian
Keyword(s):  
Emission Wavelength

Measuring temperature heterogeneities during solar-photothermal heating using quantum dot nanothermometry

The Analyst ◽  
2021 ◽  
Author(s):  
Stephanie K. Loeb ◽  
Haoran Wei ◽  
Jae-Hong Kim
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Fluorescence Emission ◽  
Emission Wavelength ◽  
Wavelength Shift ◽  
Cdse Quantum Dots ◽  
Photothermal Heating

The fluorescence emission wavelength shift of CdSe quantum dots due to heat-induced lattice dilatation is used to spatially resolve temperatures in solar photothermal systems.

Dense arrays of site-controlled quantum dots with tailored emission wavelength: Growth mechanisms and optical properties

2017 ◽  
Vol 111 (22) ◽  
pp. 221102 ◽  
Author(s):  
Alessandro Surrente ◽  
Marco Felici ◽  
Pascal Gallo ◽  
Alok Rudra ◽  
Benjamin Dwir ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Emission Wavelength ◽  
Growth Mechanisms ◽  
Dense Arrays

Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD

2005 ◽  
Vol 26 (1-4) ◽  
pp. 81-85 ◽  
Author(s):  
Y. Sakuma ◽  
K. Takemoto ◽  
S. Hirose ◽  
T. Usuki ◽  
N. Yokoyama
Keyword(s):  
Quantum Dots ◽  
Emission Wavelength ◽  
Self Assembled

scholarly journals Extending the emission wavelength of Ge nanopillars to 225 μm using silicon nitride stressors

2015 ◽  
Vol 23 (14) ◽  
pp. 18193 ◽  
Author(s):  
R.W. Millar ◽  
K. Gallacher ◽  
A. Samarelli ◽  
J. Frigerio ◽  
D. Chrastina ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Emission Wavelength

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

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