Dense arrays of site-controlled quantum dots with tailored emission wavelength: Growth mechanisms and optical properties

2017 ◽  
Vol 111 (22) ◽  
pp. 221102 ◽  
Author(s):  
Alessandro Surrente ◽  
Marco Felici ◽  
Pascal Gallo ◽  
Alok Rudra ◽  
Benjamin Dwir ◽  
...  
2011 ◽  
Vol 109 (5) ◽  
pp. 053514 ◽  
Author(s):  
S. Sergent ◽  
B. Damilano ◽  
T. Huault ◽  
J. Brault ◽  
M. Korytov ◽  
...  

Author(s):  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Shintaro Nomura ◽  
Hideki Hirayama ◽  
Yoshinobu Aoyagi

Author(s):  
Hannes Schürmann ◽  
Gordon Schmidt ◽  
Frank Bertram ◽  
Christoph Berger ◽  
Sebastian Metzner ◽  
...  

Abstract We report on the formation process of GaN/AlN quantum dots which arises after the deposition of 1 - 2 monolayers of GaN on an AlN/sapphire template followed by a distinct growth interruption. The influence of the duration of a growth interruption on structural and optical properties of the GaN layer has been systematically investigated. Quantum dots develop from initially bulky GaN islands, which nucleate in close vicinity to bundles of threading dislocations. For prolonged growth interruptions a decreasing island size is observed which is consistent with a systematic blue shift of the emission wavelength. In addition, a fragmentation of the bulky GaN islands into several smaller islands occurs, strongly depending on local strain fields caused by threading dislocations as well as on a different facet orientation of the islands. This morphological transition during growth interruption eventually leads to GaN quantum dot formation which assemble as clusters with a density of 108 cm-2. Desorption of GaN is identified as the major source for this morphological transition. The growth interruption time allows for tuning of the quantum dot emission wavelength in the UV spectral range.


2006 ◽  
Vol 05 (06) ◽  
pp. 847-852
Author(s):  
ZHIDAN FANG ◽  
ZHENG GONG ◽  
ZHENHUA MIAO ◽  
ZHICHUAN NIU

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 μm. The density of the QDs is increased to 1.17 × 1010 cm -2. It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs -based 1.3 μm light sources.


2001 ◽  
Vol 92 (3) ◽  
pp. 500-513 ◽  
Author(s):  
A. I. Yakimov ◽  
A. V. Dvurechenskii ◽  
N. P. Stepina ◽  
A. I. Nikiforov ◽  
A. V. Nenashev

2017 ◽  
Vol 7 (1) ◽  
pp. 73-79 ◽  
Author(s):  
Deepak Kumar Gupta ◽  
Mahesh Verma ◽  
Dinesh Patidar ◽  
Kananbala Sharma ◽  
N.S. Saxena

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