Terminal and Bridging Imido Complexes from Titanium Tetrachloride and Primary Amines. Implications for the Chemical Vapor Deposition of Titanium Nitride Films

1994 ◽  
Vol 33 (25) ◽  
pp. 5879-5889 ◽  
Author(s):  
T. Suren Lewkebandara ◽  
Philip H. Sheridan ◽  
Mary Jane Heeg ◽  
Arnold L. Rheingold ◽  
Charles H. Winter
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Titanium Tetrachloride ◽  
Chemical Vapor ◽  
Primary Amines ◽  
Imido Complexes

Imido Complexes Derived from the Reactions of Niobium and Tantalum Pentachlorides with Primary Amines:  Relevance to the Chemical Vapor Deposition of Metal Nitride Films

1996 ◽  
Vol 35 (17) ◽  
pp. 4910-4920 ◽  
Author(s):  
Kumudini C. Jayaratne ◽  
Glenn P. A. Yap ◽  
Brian S. Haggerty ◽  
Arnold L. Rheingold ◽  
Charles H. Winter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Amines ◽  
Metal Nitride ◽  
Imido Complexes

scholarly journals Deposition of titanium nitride on porous glass by plasma-enhanced chemical vapor deposition.

Shinku ◽  
1991 ◽  
Vol 34 (3) ◽  
pp. 335-338
Author(s):  
Shigeharu TAMURA ◽  
Tetsuo YAZAWA ◽  
Toshiyuki MIHARA ◽  
Sabro KIMURA ◽  
Tadashi ISHIDA ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Porous Glass ◽  
Vapor Deposition ◽  
Chemical Vapor

The Utility of Laser Light Scattering in Assessing the Mixability of Reagents for Chemical Vapor Deposition

1993 ◽  
Vol 324 ◽  
Author(s):  
Bin Ni ◽  
Gene P. Reck ◽  
James W. Proscia
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Scattering ◽  
Titanium Nitride ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Laser Light ◽  
Chemical Vapor ◽  
Reaction Chamber ◽  
Laser Light Scattering ◽  
Tin Oxide Films

AbstractThe premixability of reagents used in chemical vapor deposition reactors is important to insure that gas feed lines and nozzles do not become clogged with particulates during operation. Even if reactants are to be kept separate until introduced into a reaction chamber, it is desirable to limit the number of particles formed. A reactor which utilizes laser light scattering to monitor particulate formation when gaseous reagents are mixed is described. The reaction of tin (IV) chloride with water is commonly used to produce tin oxide films by chemical vapor deposition. It was found by the light scattering experiment that at temperatures above about 110°C the number of particulates formed is greatly reduced. Therefore, it would be most desirable that these reagents be mixed above this temperature when depositing tin oxide from this reaction. The reaction of titanium tetrachloride with various amine was also investigated by this method. This reaction has been demonstrated to produce titanium nitride above 450°C. For each case, it was observed that there was a temperature above which the number of particulates was significantly reduced. This temperature was always below the optimal temperature for producing titanium nitride films.

Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Titanium Bromide And Ammonia

1995 ◽  
Vol 410 ◽  
Author(s):  
Roy G. Gordon ◽  
Ross W. Frisbie ◽  
Joshua Musher ◽  
John Thornton
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Weight Percent ◽  
Liquid Solution ◽  
Injection System ◽  
Direct Liquid Injection ◽  
Titanium Tetrabromide

ABSTRACTTitanium nitride films were formed by chemical vapor deposition from titanium tetrabromide and ammonia at atmospheric pressure and substrate temperatures from about 400 to 600 °C. Although titanium tetrabromide is a highly hygroscopic solid at room temperature, it can be handled conveniently as a very concentrated liquid solution (85 weight percent) in bromine as a solvent. This solution can be vaporized by a direct liquid injection system. Alternatively, the solution can be pumped into a bubbler, from which the bromine solvent is then removed by fractional distillation. Rutherford Backscattering Spectroscopy was used to determine that the bromine content of TiN deposited at 500°C was about one atomic per cent. Growth rates were about 17 nm/min, and electrical resistivity was found to be about 200 μΩ-cm.

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