Surface Oxidation Kinetics: A Scanning Tunneling Microscopy Experiment

2000 ◽  
Vol 77 (9) ◽  
pp. 1198 ◽  
Author(s):  
Jordan C. Poler
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Oxidation Kinetics ◽  
Surface Oxidation ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Experiment

scholarly journals Characteristics of sulfur atoms adsorbed on Ag(100), Ag(110), and Ag(111) as probed with scanning tunneling microscopy: experiment and theory

2019 ◽  
Vol 21 (20) ◽  
pp. 10540-10551 ◽  
Author(s):  
Peter M. Spurgeon ◽  
Da-Jiang Liu ◽  
Holly Walen ◽  
Junepyo Oh ◽  
Hyun Jin Yang ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Bias Voltage ◽  
Voltage Dependence ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Experiment ◽  
Bias Voltage Dependence

Sulfur atoms on Ag(100) exhibit bias voltage dependence.

Surface oxidation of a Nb(100) single crystal by scanning tunneling microscopy

2002 ◽  
Vol 48 (2-3) ◽  
pp. 163-167 ◽  
Author(s):  
Y Li ◽  
B An ◽  
S Fukuyama ◽  
K Yokogawa ◽  
M Yoshimura
Keyword(s):  
Single Crystal ◽  
Scanning Tunneling Microscopy ◽  
Surface Oxidation ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Self-assembly of semifluorinated n-alkanethiols on {111}-oriented Au investigated with scanning tunneling microscopy experiment and theory

2007 ◽  
Vol 127 (2) ◽  
pp. 024702 ◽  
Author(s):  
Samson N. Patole ◽  
Christopher J. Baddeley ◽  
David O’Hagan ◽  
Neville V. Richardson ◽  
Francesco Zerbetto ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Self Assembly ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Experiment

Imaging the confined surface oxidation of Ni3Al(111) by in situ high temperature scanning tunneling microscopy

2018 ◽  
Vol 20 (34) ◽  
pp. 21844-21855 ◽  
Author(s):  
Xinzhou Ma ◽  
Sebastian Günther
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscopy ◽  
Surface Oxidation ◽  
Initial Step ◽  
Surface Oxide ◽  
Scanning Tunneling ◽  
Material Transport ◽  
Tunneling Microscopy ◽  
Surface Oxide Formation ◽  
Temperature Scanning

Surface oxide growth ontop of Ni3Al(111) upon O2 exposure at 735 K leads to both, overgrowth of steps and terrace retraction (blue lines indicate the initial step edge positions). The material transport during surface oxide formation appears when subtracting high temperature scanning tunneling microscopy images one from another.

A study on α-RuCl3 crystal structure by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 30-31
Author(s):  
H.-J. Cantow ◽  
H. Hillebrecht ◽  
S. Magonov ◽  
H. W. Rotter ◽  
G. Thiele
Keyword(s):  
Crystal Structure ◽  
Density Distribution ◽  
Scanning Tunneling Microscopy ◽  
Electron Density ◽  
Structure Determination ◽  
Electron Density Distribution ◽  
Scanning Tunneling ◽  
Monoclinic Space Group ◽  
Tunneling Microscopy ◽  
X Ray

From X-ray analysis, the conclusions are drawn from averaged molecular informations. Thus, limitations are caused when analyzing systems whose symmetry is reduced due to interatomic interactions. In contrast, scanning tunneling microscopy (STM) directly images atomic scale surface electron density distribution, with a resolution up to fractions of Angstrom units. The crucial point is the correlation between the electron density distribution and the localization of individual atoms, which is reasonable in many cases. Thus, the use of STM images for crystal structure determination may be permitted. We tried to apply RuCl3 - a layered material with semiconductive properties - for such STM studies. From the X-ray analysis it has been assumed that α-form of this compound crystallizes in the monoclinic space group C2/m (AICI3 type). The chlorine atoms form an almost undistorted cubic closed package while Ru occupies 2/3 of the octahedral holes in every second layer building up a plane hexagon net (graphite net). Idealizing the arrangement of the chlorines a hexagonal symmetry would be expected. X-ray structure determination of isotypic compounds e.g. IrBr3 leads only to averaged positions of the metal atoms as there exist extended stacking faults of the metal layers.

Roughness measurements of nonlinear optical polymer films by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 22-23
Author(s):  
I. H. Musselman ◽  
R.-T. Chen ◽  
P. E. Russell
Keyword(s):  
Surface Roughness ◽  
Scanning Tunneling Microscopy ◽  
Nonlinear Optical ◽  
Polymer Surface ◽  
Light Extinction ◽  
Scanning Tunneling ◽  
Silicon Substrates ◽  
Tunneling Microscopy ◽  
Optical Polymer ◽  
Total Light

Scanning tunneling microscopy (STM) has been used to characterize the surface roughness of nonlinear optical (NLO) polymers. A review of STM of polymer surfaces is included in this volume. The NLO polymers are instrumental in the development of electrooptical waveguide devices, the most fundamental of which is the modulator. The most common modulator design is the Mach Zehnder interferometer, in which the input light is split into two legs and then recombined into a common output within the two dimensional waveguide. A π phase retardation, resulting in total light extinction at the output of the interferometer, can be achieved by changing the refractive index of one leg with respect to the other using the electrooptic effect. For best device performance, it is essential that the NLO polymer exhibit minimal surface roughness in order to reduce light scattering. Scanning tunneling microscopy, with its high lateral and vertical resolution, is capable of quantifying the NLO polymer surface roughness induced by processing. Results are presented below in which STM was used to measure the surface roughness of films produced by spin-coating NLO-active polymers onto silicon substrates.

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