Imaging the confined surface oxidation of Ni3Al(111) by in situ high temperature scanning tunneling microscopy

2018 ◽  
Vol 20 (34) ◽  
pp. 21844-21855 ◽  
Author(s):  
Xinzhou Ma ◽  
Sebastian Günther
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscopy ◽  
Surface Oxidation ◽  
Initial Step ◽  
Surface Oxide ◽  
Scanning Tunneling ◽  
Material Transport ◽  
Tunneling Microscopy ◽  
Surface Oxide Formation ◽  
Temperature Scanning

Surface oxide growth ontop of Ni3Al(111) upon O2 exposure at 735 K leads to both, overgrowth of steps and terrace retraction (blue lines indicate the initial step edge positions). The material transport during surface oxide formation appears when subtracting high temperature scanning tunneling microscopy images one from another.

IN-SITU HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTH TiN(001)

2000 ◽  
Vol 07 (05n06) ◽  
pp. 589-593 ◽  
Author(s):  
S. KODAMBAKA ◽  
V. PETROVA ◽  
A. VAILIONIS ◽  
P. DESJARDINS ◽  
D. G. CAHILL ◽  
...  
Keyword(s):  
High Temperature ◽  
Scanning Tunneling Microscopy ◽  
Ostwald Ripening ◽  
Single Atom ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Decay Kinetics ◽  
Tunneling Microscopy ◽  
Temperature Scanning

In-situ high-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flat TiN (001) terraces and in single-atom deep vacancy pits at temperatures of 750–950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs–Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23±0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4±0.3 eV.

Sign in / Sign up

Export Citation Format

Share Document