Rapid Identification of Areas of Interest in Thin Film Materials Libraries by Combining Electrical, Optical, X-ray Diffraction, and Mechanical High-Throughput Measurements: A Case Study for the System Ni–Al

2014 ◽  
Vol 16 (12) ◽  
pp. 686-694 ◽  
Author(s):  
S. Thienhaus ◽  
D. Naujoks ◽  
J. Pfetzing-Micklich ◽  
D. König ◽  
A. Ludwig
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Rapid Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Areas Of Interest

Investigation of Superalloy Composition Space Using High Throughput Thin Film Synthesis and Synchrotron X-Ray Diffraction

2016 ◽  
pp. 45-54 ◽  
Author(s):  
LD Connor ◽  
PM Mignanelli ◽  
S Guérin ◽  
JP Soulié ◽  
C Mormiche ◽  
...  
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition Space ◽  
Film Synthesis

High Throughput X-ray Diffraction Analysis of Combinatorial Polycrystalline Thin Film Libraries

2010 ◽  
Vol 82 (11) ◽  
pp. 4564-4569 ◽  
Author(s):  
Scilla Roncallo ◽  
Omeed Karimi ◽  
Keith D. Rogers ◽  
John M. Gregoire ◽  
David W. Lane ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
High Throughput ◽  
X Ray Diffraction ◽  
Polycrystalline Thin Film ◽  
X Ray

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Deep learning for visualization and novelty detection in large X-ray diffraction datasets

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Lars Banko ◽  
Phillip M. Maffettone ◽  
Dennis Naujoks ◽  
Daniel Olds ◽  
Alfred Ludwig
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Artificial Intelligence ◽  
Deep Learning ◽  
Novelty Detection ◽  
Structural Similarity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns ◽  
Post Hoc

AbstractWe apply variational autoencoders (VAE) to X-ray diffraction (XRD) data analysis on both simulated and experimental thin-film data. We show that crystal structure representations learned by a VAE reveal latent information, such as the structural similarity of textured diffraction patterns. While other artificial intelligence (AI) agents are effective at classifying XRD data into known phases, a similarly conditioned VAE is uniquely effective at knowing what it doesn’t know: it can rapidly identify data outside the distribution it was trained on, such as novel phases and mixtures. These capabilities demonstrate that a VAE is a valuable AI agent for aiding materials discovery and understanding XRD measurements both ‘on-the-fly’ and during post hoc analysis.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray
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