Mechanism and Enhanced Yield of Carbon Nanotube Growth on Stainless Steel by Oxygen-Induced Surface Reconstruction

2015 ◽  
Vol 27 (3) ◽  
pp. 932-937 ◽  
Author(s):  
Sebastian W. Pattinson ◽  
Balakrishnan Viswanath ◽  
Dmitri N. Zakharov ◽  
Jinjing Li ◽  
Eric A. Stach ◽  
...  
Author(s):  
Warren Robison ◽  
Brian Jensen ◽  
Anton Bowden

This paper reports research in fabrication of cylindrical stents using carbon-infiltrated carbon nanotubes (CI-CNT), a material with good hemocompatibility. We demonstrate growth of CI-CNT forests in patterned lines on a 3 mm diameter stainless steel (SS) rod. Lines were patterned parallel, at 7°, at 45°, and perpendicular relative to the axis of the rod. Minimal cracking was seen in the parallel and angled lines. Significant cracking was seen in the perpendicular lines and we attempted to characterize the cracking in order to correlate it to width of the lines and height of the forest. No correlation was found but the average uncracked length was determined to be 414 μm with a standard deviation of 67 μm. We also demonstrate successful growth with minimal cracking of CI-CNT forests in a zig-zag type pattern in an effort to further the possibility of creating a coronary stent utilizing CI-CNT. Some of the patterned samples were also removed from the cylindrical substrate, resulting in free-standing, patterned, cylindrical patterns made from CI-CNT.


Author(s):  
Daniel G. Prawitt ◽  
Danni Porter ◽  
Brian D. Jensen

This paper presents, for the first time, the process of growing a pattern of carbon nanotubes (CNT(s)) on 316L stainless steel. The data presented is preliminary and requires further investigation to detail the growth behaviors of CNTs on stainless steel in regards to producing a pattern. However, this article presents the viability of producing a pattern on a stainless steel surface that can be used in bio-surfacing and electronic applications, among others. The results show that producing a CNT pattern on stainless steel can be achieved in a similar manner to that of producing a CNT pattern on a silicon wafer, with some vital differences in the photolithography and growth processes. The results also show that long CNT growth can lead to partial overgrowth of the pattern.


2009 ◽  
Vol 5 (3) ◽  
pp. 302-305 ◽  
Author(s):  
M. Saeidi ◽  
M. Vaezzadeh

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045306
Author(s):  
Georg Daniel Förster ◽  
Thomas D. Swinburne ◽  
Hua Jiang ◽  
Esko Kauppinen ◽  
Christophe Bichara

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