Detection of Low-Density Surface Sites on Silica: Experimental Evidence of Intrinsic Oxygen-Vacancy Defects

2014 ◽  
Vol 26 (6) ◽  
pp. 2166-2171 ◽  
Author(s):  
Joseph M. McCrate ◽  
John G. Ekerdt
Keyword(s):  
Oxygen Vacancy ◽  
Experimental Evidence ◽  
Low Density ◽  
Vacancy Defects ◽  
Surface Sites ◽  
Density Surface

scholarly journals Charge-Transfer Induced by the Oxygen Vacancy Defects in the Ag/MoO3 Composite System

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1292
Author(s):  
Qi Chu ◽  
Jingmeng Li ◽  
Sila Jin ◽  
Shuang Guo ◽  
Eungyeong Park ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Oxygen Vacancy ◽  
Composite System ◽  
Wide Band ◽  
Utilization Rate ◽  
Wide Band Gap ◽  
Interesting Phenomenon ◽  
Vacancy Defects ◽  
Characterization Methods ◽  
Surface Enhanced Raman

In this paper, an Ag/MoO3 composite system was cosputtered by Ar plasma bombardment on a polystyrene (PS) colloidal microsphere array. The MoO3 formed by this method contained abundant oxygen vacancy defects, which provided a channel for charge transfer in the system and compensated for the wide band gap of MoO3. Various characterization methods strongly demonstrated the existence of oxygen vacancy defects and detected the properties of oxygen vacancies. 4-Aminothiophenol (p-aminothiophenol, PATP) was used as a candidate surface-enhanced Raman scattering (SERS) probe molecule to evaluate the contribution of the oxygen vacancy defects in the Ag/MoO3 composite system. Interestingly, oxygen vacancy defects are a kind of charge channel, and their powerful effect is fully reflected in their SERS spectra. Increasing the number of charge channels and increasing the utilization rate of the channels caused the frequency of SERS characteristic peaks to shift. This interesting phenomenon opens up a new horizon for the study of SERS in oxygen-containing semiconductors and provides a powerful reference for the study of PATP.

Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements

2014 ◽  
Vol 104 (11) ◽  
pp. 112906 ◽  
Author(s):  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Oxygen Vacancy ◽  
Long Range ◽  
Vacancy Defects

Facile Removal of Bulk Oxygen Vacancy Defects in Metal Oxides Driven by Hydrogen-Dopant Evaporation

2021 ◽  
pp. 9579-9583
Author(s):  
Min Hu ◽  
Qing Zhu ◽  
Yuan Zhao ◽  
Guozhen Zhang ◽  
Chongwen Zou ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Metal Oxides ◽  
Vacancy Defects ◽  
Bulk Oxygen

A copper-based sorbent with oxygen-vacancy defects from mechanochemical reduction for carbon disulfide absorption

2016 ◽  
Vol 4 (43) ◽  
pp. 17207-17214 ◽  
Author(s):  
Haipeng Chen ◽  
Shixue Zhou ◽  
Zongying Han ◽  
Yaoyao Jiang ◽  
Hao Yu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Carbon Disulfide ◽  
Particle Surface ◽  
Vacancy Defects ◽  
Trapping Sites

Mechanochemical reduction of CuO can generate Ovacdefects on the particle surface and they act as trapping sites for CS2absorption.

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