scholarly journals Facile and General Synthesis of Thermally Stable Ordered Mesoporous Rare-Earth Oxide Ceramic Thin Films with Uniform Mid-Size to Large-Size Pores and Strong Crystalline Texture

2013 ◽  
Vol 25 (22) ◽  
pp. 4633-4642 ◽  
Author(s):  
Christian Reitz ◽  
Jan Haetge ◽  
Christian Suchomski ◽  
Torsten Brezesinski
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Rare Earth Oxide ◽  
Oxide Ceramic ◽  
Thermally Stable ◽  
Ceramic Thin Films ◽  
Large Size ◽  
Ordered Mesoporous ◽  
General Synthesis

Easy and General Synthesis of Large-Sized Mesoporous Rare-Earth Oxide Thin Films by ′Micelle Assembly′

2015 ◽  
Vol 10 (12) ◽  
pp. 2590-2593 ◽  
Author(s):  
Yunqi Li ◽  
Bishnu Prasad Bastakoti ◽  
Masataka Imura ◽  
Pengcheng Dai ◽  
Yusuke Yamauchi
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Rare Earth Oxide ◽  
Oxide Thin Films ◽  
General Synthesis

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

2016 ◽  
Vol 8 (45) ◽  
pp. 31128-31135 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Qi-Jun Sun ◽  
Ye Zhou ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Gate Dielectric ◽  
Rare Earth Oxide ◽  
Oxide Thin Films ◽  
Solution Processed

Fabrication of Nanoporous Ceramic Thin Films: De-alloying and Self-organized Template Formation Onamorphous Substrates

2002 ◽  
Vol 17 (1) ◽  
pp. 115-126 ◽  
Author(s):  
Maggie Paulose ◽  
Oomman K. Varghese ◽  
Craig A. Grimes
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Sol Gel ◽  
Oxide Ceramic ◽  
Porous Network ◽  
Self Organized ◽  
Ceramic Thin Films ◽  
Transmission Electron ◽  
Amorphous Substrate ◽  
Drying Conditions

Sol-gel-derived metal oxide ceramic thin films deposited onto amorphous iron-rich substrates were found to form self-organized nanoporous structures dependent upon the extent to which the substrate is de-alloyed, a function of the substrate alloycomposition, acid concentration of the sol, and film drying conditions. Field emission scanning electron microscopy, transmission electron microscopy, and x-ray energy dispersive analysis were used to investigate details of the porous structure formation.Our studies showed the more electrochemically active elements in the amorphous substrate are de-alloyed by the sol in high-humidity environments, whereupon the liberated elements form oxides replicating the de-alloyed substrate matrix resulting in athree dimensional porous network structure.

Relationships between rare earth oxide polymorphs in thin films treated with water vapour

1989 ◽  
Vol 24 (8) ◽  
pp. 2801-2807 ◽  
Author(s):  
M. Gasgnier ◽  
G. Schiffmacher ◽  
P. Caro
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Water Vapour ◽  
Rare Earth Oxide

Design, Synthesis, Structural and Textural Characterization, and Electrical Properties of Mesoporous Thin Films Made of Rare Earth Oxide Binaries

2009 ◽  
Vol 21 (11) ◽  
pp. 2184-2192 ◽  
Author(s):  
Jessie Hierso ◽  
Ozlem Sel ◽  
Armelle Ringuede ◽  
Christel Laberty-Robert ◽  
Luc Bianchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Oxide ◽  
Design Synthesis ◽  
Textural Characterization ◽  
Mesoporous Thin Films

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

2015 ◽  
Vol 1729 ◽  
pp. 23-28 ◽  
Author(s):  
Yogesh Sharma ◽  
Pankaj Misra ◽  
Shojan P. Pavunny ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Resistive Switching ◽  
High Resistance ◽  
Rare Earth Oxide ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Device Structure ◽  
Resistance State ◽  
Unipolar Resistive Switching

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Sign in / Sign up

Export Citation Format

Share Document