Relationships between rare earth oxide polymorphs in thin films treated with water vapour

1989 ◽  
Vol 24 (8) ◽  
pp. 2801-2807 ◽  
Author(s):  
M. Gasgnier ◽  
G. Schiffmacher ◽  
P. Caro
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Water Vapour ◽  
Rare Earth Oxide

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

2016 ◽  
Vol 8 (45) ◽  
pp. 31128-31135 ◽  
Author(s):  
Jiaqing Zhuang ◽  
Qi-Jun Sun ◽  
Ye Zhou ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Gate Dielectric ◽  
Rare Earth Oxide ◽  
Oxide Thin Films ◽  
Solution Processed

Design, Synthesis, Structural and Textural Characterization, and Electrical Properties of Mesoporous Thin Films Made of Rare Earth Oxide Binaries

2009 ◽  
Vol 21 (11) ◽  
pp. 2184-2192 ◽  
Author(s):  
Jessie Hierso ◽  
Ozlem Sel ◽  
Armelle Ringuede ◽  
Christel Laberty-Robert ◽  
Luc Bianchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Oxide ◽  
Design Synthesis ◽  
Textural Characterization ◽  
Mesoporous Thin Films

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

2015 ◽  
Vol 1729 ◽  
pp. 23-28 ◽  
Author(s):  
Yogesh Sharma ◽  
Pankaj Misra ◽  
Shojan P. Pavunny ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Resistive Switching ◽  
High Resistance ◽  
Rare Earth Oxide ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Device Structure ◽  
Resistance State ◽  
Unipolar Resistive Switching

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Easy and General Synthesis of Large-Sized Mesoporous Rare-Earth Oxide Thin Films by ′Micelle Assembly′

2015 ◽  
Vol 10 (12) ◽  
pp. 2590-2593 ◽  
Author(s):  
Yunqi Li ◽  
Bishnu Prasad Bastakoti ◽  
Masataka Imura ◽  
Pengcheng Dai ◽  
Yusuke Yamauchi
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Rare Earth Oxide ◽  
Oxide Thin Films ◽  
General Synthesis

Rare-earth oxide thin films for gate dielectrics in microelectronics

2006 ◽  
Vol 418 (1-2) ◽  
pp. 27-34 ◽  
Author(s):  
Markku Leskelä ◽  
Kaupo Kukli ◽  
Mikko Ritala
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Gate Dielectrics ◽  
Rare Earth Oxide ◽  
Oxide Thin Films

scholarly journals Generalized Synthesis of Mesoporous Rare Earth Oxide Thin Films through Amphiphilic Ionic Block Copolymer Templating

2013 ◽  
Vol 2013 (8) ◽  
pp. 1251-1257 ◽  
Author(s):  
Ying Xiao ◽  
Shusen You ◽  
Yuan Yao ◽  
Tao Zheng ◽  
Chen Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Block Copolymer ◽  
Rare Earth Oxide ◽  
Oxide Thin Films
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