Systematic Investigation of Isoindigo-Based Polymeric Field-Effect Transistors: Design Strategy and Impact of Polymer Symmetry and Backbone Curvature

2012 ◽  
Vol 24 (10) ◽  
pp. 1762-1770 ◽  
Author(s):  
Ting Lei ◽  
Yue Cao ◽  
Xu Zhou ◽  
Yang Peng ◽  
Jiang Bian ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Design Strategy ◽  
Systematic Investigation

Electromechanical coupling and design considerations in single-layer MoS2 suspended-channel transistors and resonators

Nanoscale ◽  
2015 ◽  
Vol 7 (47) ◽  
pp. 19921-19929 ◽  
Author(s):  
Rui Yang ◽  
Arnob Islam ◽  
Philip X.-L. Feng
Keyword(s):  
Field Effect ◽  
Electromechanical Coupling ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Systematic Investigation ◽  
Coupling Effects ◽  
Design Considerations

We describe systematic investigation of electromechanical coupling effects in suspended single-layer MoS2, as suspended-channel field-effect transistors and vibrating-channel nanoelectromechanical resonators.

An Asymmetric Molecular Design Strategy for Organic Field-Effect Transistors with High Consistency of Performance

2019 ◽  
Vol 1 (7) ◽  
pp. 1233-1242
Author(s):  
Rutian Gao ◽  
Peng Yuan ◽  
Xiaonan Zhang ◽  
Shenglong Sang ◽  
Xiao-Chun Hang ◽  
...  
Keyword(s):  
Field Effect ◽  
Molecular Design ◽  
Field Effect Transistors ◽  
Design Strategy ◽  
Organic Field Effect Transistors ◽  
High Consistency

A Timely Synthetic Tailoring of Biaxially Extended Thienylenevinylene-Like Polymers for Systematic Investigation on Field-Effect Transistors

2014 ◽  
Vol 25 (4) ◽  
pp. 586-596 ◽  
Author(s):  
Dohyuk Yoo ◽  
Benjamin Nketia-Yawson ◽  
Seok-Ju Kang ◽  
Hyungju Ahn ◽  
Tae Joo Shin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Systematic Investigation

Molecular Requirements for Printable Organic Semiconductors in 7-Alkyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophenes (Ph-BTBT-Cn’s)

MRS Advances ◽  
2016 ◽  
Vol 1 (38) ◽  
pp. 2653-2658
Author(s):  
S. Inoue ◽  
H. Minemawari ◽  
J. Tsutsumi ◽  
T. Hamai ◽  
S. Arai ◽  
...  
Keyword(s):  
Chain Length ◽  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Carrier Transport ◽  
Alkyl Chain ◽  
Field Effect Transistors ◽  
Systematic Investigation ◽  
Alkyl Chain Length

ABSTRACTHere we discuss requirements for high performance and solution processable organic semiconductors, by presenting a systematic investigation of 7-alkyl-2-phenyl[1]benzothieno[3,2-b][1]benzothiophenes (Ph-BTBT-Cn’s). We found that the solubility and thermal properties of Ph-BTBT-Cn’s depend systematically on the substituted alkyl-chain length n. The observed features are well understood in terms of the change of molecular packing motif with n: The compounds with n ≤ 4 do not form independent alkyl chain layers, whereas those with n ≥ 5 form isolated alkyl chain layers. The latter compounds afford a series of isomorphous bilayer-type crystal structures that form two-dimensional carrier transport layers within the crystals. We also show that the Ph-BTBT-C10 afford high performance single-crystalline field-effect transistors the mobility of which reaches as high as 15.9 cm2/Vs. These results demonstrate a crucial role of the substituted alkyl chain length for obtaining high performance organic semiconductors and field-effect transistors.

Enhancement of Charge Injection in Organic Field-Effect Transistors Through Semiconducting Organic Buffer Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3923-3928
Author(s):  
Gyujeong Lee ◽  
Hea-Lim Park ◽  
Sin-Hyung Lee ◽  
Min-Hoi Kim ◽  
Sin-Doo Lee
Keyword(s):  
Buffer Layer ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Systematic Investigation ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Semiconductor Interface ◽  
Molecular Semiconductors ◽  
Injection Barrier

We investigate the effect of a semiconducting organic buffer layer (SOBL) on the injection and transport of charges in organic field-effect transistors (OFETs). Here, two different injection barriers at the source/organic semiconductor interface are respectively studied with the aid of a numerical simulation: one is intermediate (0.4 eV), and the other is large energy barriers (0.6 eV). The introduction of nanostructure buffer layer, or SOBL, exhibits the decrease of potential loss at the contact interfaces, improving the electrical performance of the OFETs. It is also found that the energy level as well as the mobility of the SOBL plays an important role in determining the injection properties at the metal/organic hetero-interfaces and thus improving the device performance. Our systematic investigation on the injection barrier by the introduction of the nanostructure buffer layer will provide a useful guideline for the fabrication of high-performance FETs with molecular semiconductors.

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