Ionic-Diffusion-Driven, Low-Temperature, Solid-State Reactions Observed on Copper Sulfide Nanowires

2011 ◽  
Vol 23 (22) ◽  
pp. 5045-5051 ◽  
Author(s):  
Matthew T. Mayer ◽  
Zachary I. Simpson ◽  
Sa Zhou ◽  
Dunwei Wang
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Copper Sulfide ◽  
Solid State Reactions ◽  
Ionic Diffusion

Synthesis and Characterization of Metal Silicide/Silicon Carbide Composites by Low Temperature Solid-State Reactions

1993 ◽  
Vol 322 ◽  
Author(s):  
D. Zeng ◽  
M. J. Hampden-Smith ◽  
L.-M. Wang
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Thermal Treatment ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Solid State Reactions ◽  
Synthesis And Characterization ◽  
Metal Silicide ◽  
Co Reduction

AbstractCo-reduction of mixtures of MoCl3(THF)3 and SiCls4 in THF using Li/C10H8 or both Li/C10Hs8 and LiBEt3H resulted in formation and separation of black powders which upon thermal annealing at temperatures ranging from 750°C to 1 100°C produced crystalline molybdenum silicide and silicon carbide composite. Co-reduction of mixtures of WCI4 and GeBr4 with LiBEt3H in THF formed W2C and elemental Ge which upon thermal treatment at 750°C for 4 hours generated a small amount of crystalline W5Ge3.

scholarly journals Kinetic studies on low-temperature solid-state reactions in interstellar ices

2012 ◽  
Vol 58 ◽  
pp. 363-367
Author(s):  
P. Theulé ◽  
F. Duvernay ◽  
F. Mispelaer ◽  
J.B. Bossa ◽  
F. Borget ◽  
...  
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Kinetic Studies ◽  
Solid State Reactions ◽  
Interstellar Ices

Wafer Bonding for Hybrid Circuit Technology Using Solid-State Reactions

1993 ◽  
Vol 314 ◽  
Author(s):  
Z. Ma ◽  
G. L. Zhou ◽  
T. C. Shen ◽  
M. E. Lin ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Solid State ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Hybrid Circuit ◽  
Circuit Technology ◽  
As Solid Phase

AbstractIn this study, we report a new wafer bonding technique for the integration of GaAs- and InP-based optical devices with prefabricated Si electronic devices in hybrid circuit technology. This technique uses a Au-Ge eutectic alloy as the bonding materials between GaAs and Si wafers, and between InP and Si wafers. This process takes advantage of the low temperature solid-state reactions at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. The bonding was carried out by annealing the samples at 280–300°C in an alloying furnace. The reliability of the joined wafers was evaluated by both cleavage test and standard thermal cycling test. The joining interfaces were characterized by scanning electron microscopy and transmission electron microscopy. The results reveal that the bonding is achieved by low temperature reactions at the GaAs/Au-Ge and InP/Au-Ge interfaces as well as solid-phase epitaxial regrowth at the Si interfaces. The joined structure has very good integrity.

scholarly journals Unexplored reactivity of (Sn)2− oligomers with transition metals in low-temperature solid-state reactions

2019 ◽  
Vol 55 (44) ◽  
pp. 6189-6192
Author(s):  
Shunsuke Sasaki ◽  
Mélanie Lesault ◽  
Elodie Grange ◽  
Etienne Janod ◽  
Benoît Corraze ◽  
...  
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Transition Metals ◽  
Solid State Reactions ◽  
Transition Elements

We demonstrate here the low temperature topochemical insertion of transition elements (Fe, Ni, and Cu) in precursors containing pre-formed (Sn)2− (n = 2 and 3) oligomers.

Low temperature synthesis of barium oxynitridosilicates using BaCN2 and SiO2

2021 ◽  
Author(s):  
Yuji Masubuchi ◽  
Naoki Sada ◽  
Yoshiteru Kawahara ◽  
Kenji Arai ◽  
Teruki Motohashi ◽  
...  
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Solid State Reactions ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis

Barium oxynitridosilicates, Ba3Si6O12N2 and Ba3Si6O9N4, were obtained from a mixture of BaCN2 and SiO2 at 800 °C, which is several hundred degrees lower than that required in solid state reactions...

Zwei monokline Kupfer-Oxovanadate des Magnesiums mit geordneter Metallverteilung: m-Mg2CuV2O8 und MgCu2V2O8. Ein Beitrag zur Dimorphie von Mg2CuV2O8 / Two Monoclinic Copper Oxovanadates of Magnesium Showing Ordered Metal Distribution: m-Mg2CuV2O8 and MgCu2V2O8. A Contribution on Dimorphism of Mg2CuV2O8

1996 ◽  
Vol 51 (6) ◽  
pp. 817-821 ◽  
Author(s):  
O. Schrandt ◽  
Hk. Müller-Buschbaum
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Single Crystals ◽  
Lattice Energy ◽  
Solid State Reactions ◽  
Tetrahedral Coordination ◽  
Monoclinic Symmetry ◽  
Crystal Forms ◽  
Symmetry Space ◽  
Symmetry Space Group

Abstract Single crystals of ra-Mg2CuV2O8 (I) and MgCu2V2O8 (II) have been prepared by solid state reactions. The orange (I) and dark red (II) crystals show monoclinic symmetry, space group C52h -P21/c, (I): a = 6.167(3), b = 8.172(5), c = 6.400(8) Å, β = 116.22(3)°, Z = 2; (II): a = 6.453(1), b = 8.342(2), c = 11.517(2)Å,β 90.44(2), Z = 4. Both compounds show ordered metal distributions and vanadium in tetrahedral coordination by oxygen. (I) is characterized by elongated CuO6 octahedra and (II) by trigonal CuO5 bipyramids. m-Mg2CuV2O8 is the low temperature form of the formerly investigated orthorhombic o-Mg2CuV2O8. Calculations of the Coulomb parts of the lattice energy of the two crystal forms are discussed

Mechanism for anomalous luminescence behaviour of Eu2+-doped red-emitting magnesium nitride phosphors

RSC Advances ◽  
2016 ◽  
Vol 6 (77) ◽  
pp. 73063-73069 ◽  
Author(s):  
Qiang Long ◽  
Yanyan Li ◽  
Yuhua Wang
Keyword(s):  
Solid State ◽  
Low Temperature ◽  
Solid State Reactions ◽  
Magnesium Nitride

A series of novel red-emitting phosphors Mg3−xN2:xEu2+ (0 ≤ x ≤ 0.08) were successfully synthesized by solid-state reactions at low temperature.

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