scholarly journals Kinetic studies on low-temperature solid-state reactions in interstellar ices

2012 ◽  
Vol 58 ◽  
pp. 363-367
Author(s):  
P. Theulé ◽  
F. Duvernay ◽  
F. Mispelaer ◽  
J.B. Bossa ◽  
F. Borget ◽  
...  
1993 ◽  
Vol 322 ◽  
Author(s):  
D. Zeng ◽  
M. J. Hampden-Smith ◽  
L.-M. Wang

AbstractCo-reduction of mixtures of MoCl3(THF)3 and SiCls4 in THF using Li/C10H8 or both Li/C10Hs8 and LiBEt3H resulted in formation and separation of black powders which upon thermal annealing at temperatures ranging from 750°C to 1 100°C produced crystalline molybdenum silicide and silicon carbide composite. Co-reduction of mixtures of WCI4 and GeBr4 with LiBEt3H in THF formed W2C and elemental Ge which upon thermal treatment at 750°C for 4 hours generated a small amount of crystalline W5Ge3.


2013 ◽  
Vol 113 (3) ◽  
pp. 1447-1453 ◽  
Author(s):  
Luis A. Pérez-Maqueda ◽  
José M. Criado ◽  
Pedro E. Sánchez-Jiménez ◽  
Antonio Perejón

2004 ◽  
Vol 23 (3) ◽  
pp. 163-176 ◽  
Author(s):  
Baijun Yan, ◽  
Jiayun Zhang, ◽  
Jianhua Liu,

CrystEngComm ◽  
2013 ◽  
Vol 15 (48) ◽  
pp. 10648 ◽  
Author(s):  
Xulai Yang ◽  
Dajun Liu ◽  
Xiaoming Xu ◽  
Xuegang He ◽  
Jia Xie

1993 ◽  
Vol 314 ◽  
Author(s):  
Z. Ma ◽  
G. L. Zhou ◽  
T. C. Shen ◽  
M. E. Lin ◽  
K. C. Hsieh ◽  
...  

AbstractIn this study, we report a new wafer bonding technique for the integration of GaAs- and InP-based optical devices with prefabricated Si electronic devices in hybrid circuit technology. This technique uses a Au-Ge eutectic alloy as the bonding materials between GaAs and Si wafers, and between InP and Si wafers. This process takes advantage of the low temperature solid-state reactions at GaAs/Au-Ge, InP/Au-Ge, and Si/Au-Ge interfaces. The bonding was carried out by annealing the samples at 280–300°C in an alloying furnace. The reliability of the joined wafers was evaluated by both cleavage test and standard thermal cycling test. The joining interfaces were characterized by scanning electron microscopy and transmission electron microscopy. The results reveal that the bonding is achieved by low temperature reactions at the GaAs/Au-Ge and InP/Au-Ge interfaces as well as solid-phase epitaxial regrowth at the Si interfaces. The joined structure has very good integrity.


2019 ◽  
Vol 55 (44) ◽  
pp. 6189-6192
Author(s):  
Shunsuke Sasaki ◽  
Mélanie Lesault ◽  
Elodie Grange ◽  
Etienne Janod ◽  
Benoît Corraze ◽  
...  

We demonstrate here the low temperature topochemical insertion of transition elements (Fe, Ni, and Cu) in precursors containing pre-formed (Sn)2− (n = 2 and 3) oligomers.


2021 ◽  
Author(s):  
Yuji Masubuchi ◽  
Naoki Sada ◽  
Yoshiteru Kawahara ◽  
Kenji Arai ◽  
Teruki Motohashi ◽  
...  

Barium oxynitridosilicates, Ba3Si6O12N2 and Ba3Si6O9N4, were obtained from a mixture of BaCN2 and SiO2 at 800 °C, which is several hundred degrees lower than that required in solid state reactions...


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