Fabrication of a Vertically Aligned Ferroelectric Perovskite Nanowire Array on Conducting Substrate

2010 ◽  
Vol 22 (16) ◽  
pp. 4806-4813 ◽  
Author(s):  
Badro Im ◽  
Hwichan Jun ◽  
Kyung Hee Lee ◽  
Sung-Ho Lee ◽  
Il Kyu Yang ◽  
...  
Keyword(s):  
Nanowire Array ◽  
Conducting Substrate ◽  
Vertically Aligned ◽  
Ferroelectric Perovskite

Controlled Synthesis of Vertically Aligned Hematite on Conducting Substrate for Photoelectrochemical Cells: Nanorods versus Nanotubes

2011 ◽  
Vol 3 (6) ◽  
pp. 1852-1858 ◽  
Author(s):  
Aiming Mao ◽  
Kahee Shin ◽  
Jung Kyu Kim ◽  
Dong Hwan Wang ◽  
Gui Young Han ◽  
...  
Keyword(s):  
Photoelectrochemical Cells ◽  
Controlled Synthesis ◽  
Conducting Substrate ◽  
Vertically Aligned

scholarly journals Field Emission of ITO-Coated Vertically Aligned Nanowire Array

2010 ◽  
Vol 5 (7) ◽  
pp. 1128-1131 ◽  
Author(s):  
Chang Hwa Lee ◽  
Seok Woo Lee ◽  
Seung S. Lee
Keyword(s):  
Field Emission ◽  
Nanowire Array ◽  
Vertically Aligned

scholarly journals Vertically Aligned n-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3137
Author(s):  
Andika Pandu Nugroho ◽  
Naufal Hanif Hawari ◽  
Bagas Prakoso ◽  
Andam Deatama Refino ◽  
Nursidik Yulianto ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Wafer ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Lithium Ion ◽  
Free Standing ◽  
Silicon Anodes ◽  
Type Silicon ◽  
Silicon Nanowire Array ◽  
Vertically Aligned

Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned n-type silicon nanowire array (n-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial n-type silicon wafer. The half-cell LIB with free-standing n-SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank n-silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm−2, the battery with the n-SiNW electrode retained 85.9% of its 0.50 mAh cm−2 capacity after the pre-lithiation step, whereas its counterpart, the blank n-silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm−2 capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm−2, showing the potential of n-SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio n-SiNW, and its application in LIBs.

scholarly journals Optimization of Si (core)/CZTS/ CZTSe (shell) nanowire array for solar cell

2021 ◽  
Author(s):  
adnen melliti
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Nanowire Array ◽  
Short Circuit Current ◽  
Optical Simulation ◽  
Second Stage ◽  
Rigorous Coupled Wave Analysis ◽  
Vertically Aligned ◽  
Current Value ◽  
Rigorous Coupled Wave

Abstract We present an optical simulation of a solar cell employing core (Si) /shell (CZTS or/and CZTSe) vertically-aligned nanowire array. The method of the simulation is rigorous coupled wave analysis. In the first stage, we studied the case where the shell is composed of only CZTS or CZTSe. A larger absorption of CZTSe led to a larger value of the ideal short circuit current (41 mA/cm2) in the case of CZTSe solar cell than in the case of CZTS solar cell (24 mA/cm2). In the second stage, to avoid the heat losses in CZTSe solar cell without reducing the current, we proposed a shell composed of a 3µm of CZTS in the upper part and a 6µm of CZTSe in the lower part. The maximum ideal current value in this structure is almost twice as large as that of a planar solar cell with the same amounts of used materials.

Manipulation of charge transfer in vertically aligned epitaxial ferroelectric KNbO3 nanowire array photoelectrodes

Nano Energy ◽  
2017 ◽  
Vol 35 ◽  
pp. 92-100 ◽  
Author(s):  
Shun Li ◽  
Jianming Zhang ◽  
Bo-Ping Zhang ◽  
Wei Huang ◽  
Catalin Harnagea ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Nanowire Array ◽  
Vertically Aligned
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