Mismatched Heteroepitaxy of Tetrahedral Semiconductors with Si via ZrB2Templates

2005 ◽  
Vol 17 (18) ◽  
pp. 4647-4652 ◽  
Author(s):  
Rahul Trivedi ◽  
Po−Liang Liu ◽  
Radek Roucka ◽  
John Tolle ◽  
Andrew V. G. Chizmeshya ◽  
...  
Keyword(s):  
Mismatched Heteroepitaxy ◽  
Tetrahedral Semiconductors

Friedel'S law breakdown and interpretation of stacking fault images in tetrahedral semiconductors

1987 ◽  
Vol 45 ◽  
pp. 318-319
Author(s):  
Rob. W. Glaisher ◽  
A.E.C. Spargo
Keyword(s):  
Relative Phase ◽  
Point Group ◽  
Binary Compound ◽  
Stacking Fault ◽  
Fold Axis ◽  
Atom Pair ◽  
Tetrahedral Semiconductors ◽  
Group Symmetries ◽  
Thin Crystal ◽  
Phase Differences

Images of <11> oriented crystals with diamond structure (i.e. C,Si,Ge) are dominated by white spot contrast which, depending on thickness and defocus, can correspond to either atom-pair columns or tunnel sites. Olsen and Spence have demonstrated a method for identifying the correspondence which involves the assumed structure of a stacking fault and the preservation of point-group symmetries by correctly aligned and stigmated images. For an intrinsic stacking fault, a two-fold axis lies on a row of atoms (not tunnels) and the contrast (black/white) of the atoms is that of the {111} fringe containing the two-fold axis. The breakdown of Friedel's law renders this technique unsuitable for the related, but non-centrosymmetric binary compound sphalerite materials (e.g. GaAs, InP, CdTe). Under dynamical scattering conditions, Bijvoet related reflections (e.g. (111)/(111)) rapidly acquire relative phase differences deviating markedly from thin-crystal (kinematic) values, which alter the apparent location of the symmetry elements needed to identify the defect.

A note on the Magnetic Susceptibility of Tetrahedral Semiconductors and Ionic Crystals

1984 ◽  
Vol 121 (1) ◽  
pp. K43-K45 ◽  
Author(s):  
L. N. Blinov ◽  
L. A. Baydakov ◽  
Z. Cimpl ◽  
F. Kosek
Keyword(s):  
Magnetic Susceptibility ◽  
Ionic Crystals ◽  
Tetrahedral Semiconductors

scholarly journals METAL–INSULATOR TRANSITIONS IN TETRAHEDRAL SEMICONDUCTORS UNDER LATTICE CHANGE

2004 ◽  
Vol 18 (07) ◽  
pp. 975-988
Author(s):  
SHAILESH SHUKLA ◽  
DEEPAK KUMAR ◽  
NITYA NATH SHUKLA ◽  
RAJENDRA PRASAD
Keyword(s):  
Dielectric Constant ◽  
Fermi Surface ◽  
Lattice Constant ◽  
Critical Behavior ◽  
Tight Binding ◽  
Metal Insulator ◽  
Wide Range ◽  
Insulating Phase ◽  
Tetrahedral Semiconductors ◽  
Lattice Compression

Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by expansion which is rather peculiar; in all cases the direct gap at Γ point closes on expansion and thereafter a zero-gap state persists over a wide range of lattice constant. The solids become metallic at an expansion of 13% to 15% when an electron Fermi surface around L-point and a hole Fermi surface at Γ-point develop. We provide an understanding of this behavior in terms of arguments based on symmetry and simple tight-binding considerations. We also report results on the critical behavior of conductivity in the metal phase and the static dielectric constant in the insulating phase and find common behavior. We consider the possibility of excitonic phases and distortions which might intervene between insulating and metallic phases.

Valence- and conduction-band densities of states for tetrahedral semiconductors: Theory and experiment

1989 ◽  
Vol 40 (14) ◽  
pp. 9644-9651 ◽  
Author(s):  
J. R. Chelikowsky ◽  
T. J. Wagener ◽  
J. H. Weaver ◽  
A. Jin
Keyword(s):  
Conduction Band ◽  
Densities Of States ◽  
Tetrahedral Semiconductors ◽  
Theory And Experiment

Deformation Potentials ofk = 0 States of Tetrahedral Semiconductors

1984 ◽  
Vol 126 (1) ◽  
pp. 11-36 ◽  
Author(s):  
A. Blacha ◽  
H. Presting ◽  
M. Cardona
Keyword(s):  
Tetrahedral Semiconductors

Predicted Modifications in the Direct and Indirect Gaps of Tetrahedral Semiconductors

1984 ◽  
Vol 52 (8) ◽  
pp. 675-678 ◽  
Author(s):  
H. W. A. M. Rompa ◽  
M. F. H. Schuurmans ◽  
F. Williams
Keyword(s):  
Tetrahedral Semiconductors
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