Valence- and conduction-band densities of states for tetrahedral semiconductors: Theory and experiment

1989 ◽  
Vol 40 (14) ◽  
pp. 9644-9651 ◽  
Author(s):  
J. R. Chelikowsky ◽  
T. J. Wagener ◽  
J. H. Weaver ◽  
A. Jin
Keyword(s):  
Conduction Band ◽  
Densities Of States ◽  
Tetrahedral Semiconductors ◽  
Theory And Experiment

Non-Stoichiometry and the Electronic Structure of Amorphous Silicon Nitride

1984 ◽  
Vol 38 ◽  
Author(s):  
L. Ley ◽  
R. Kaercher ◽  
R. L. Johnson
Keyword(s):  
Silicon Nitride ◽  
Conduction Band ◽  
Nitrogen Concentration ◽  
Lone Pair ◽  
Valence Band Maximum ◽  
Defect States ◽  
The Core ◽  
Total Nitrogen Concentration ◽  
Densities Of States ◽  
Valence Bands

AbstractWe have measured core-, valence-, and conduction band densities of states of amorphous hydrogenated (a-SiNx:H) and unhydrogenated (a-SiNx) silicon nitride with x varying between 0 and 2. From an analysis of the Si 2p core level spectra in terms of five chemically shifted components the number of Si-N bonds is calculated and compared to the total nitrogen concentration. Above x ≈ 0.8 the average silicon coordination of nitrogen starts to deviate from three. The addition of hydrogen increases this deviation because N-H bonds are favored over N-Si bonds accounting thus for the excess nitrogen concentration (x ≥ 1.33) found in hydrogenated samples. A band of N2p lone pair states is identified at the top of the valence bands in stoichiometric Si3N4. This band determines the character and position of the valence band maximum (VBM) above x = 1.1. Below x = 1.1 Si-Si bonding states mark the VBM. The conduction band minimum (CBM) is determined by Si-Si antibonding states up to x = 1.25 and its position relative to the core levels is virtually unaffected by the presence of nitrogen or hydrogen. Above x = 1.25 a percolation-like transition to Si-N antibonding states occurs which is accompanied by a sharp recession of the CBM. The position of the Fermi level within the gap is investigated as a function of x and hydrogen content. Si-H and N-H bonding states are identified at 6.3 and 9.8 eV below the VBM in nearly stoichiometric a-Si3N4. Si-Si bonding defect states lie 0.5 to 1.0 eV above the VBM and the corresponding antibonding states (3.0 ± 0.3) eV above the VBM.

Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys

1990 ◽  
Vol 192 ◽  
Author(s):  
Samer Aljishi ◽  
J. David Cohen ◽  
Shu Jin ◽  
Lothar Ley
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Silicon Germanium ◽  
Total Yield ◽  
Structural Disorder ◽  
Band Tail ◽  
Characteristic Energy ◽  
Densities Of States ◽  
Thermal Disorder

ABSTRACTThe energy distribution and temperature dependence of the conduction and valence band tail density of states in a-Si:H and a-Si,Ge:H alloys is determined via total yield photoelectron spectroscopy. All films are observed to possess purely exponential conduction and valence band tail densities of states; however, the characteristic energy of the conduction band tail increases much more rapidly with temperature in the range of 300K to 550K than that of the valence band tail. This indicates that over that temperature range the conduction band tail is considerably more susceptible to thermal disorder than to structural disorder whereas the reverse holds for the valence band tail.

scholarly journals Valence and Conduction Band Densities of States of Metal Halide Perovskites: A Combined Experimental–Theoretical Study

2016 ◽  
Vol 7 (14) ◽  
pp. 2722-2729 ◽  
Author(s):  
James Endres ◽  
David A. Egger ◽  
Michael Kulbak ◽  
Ross A. Kerner ◽  
Lianfeng Zhao ◽  
...  
Keyword(s):  
Conduction Band ◽  
Theoretical Study ◽  
Metal Halide ◽  
Densities Of States ◽  
Halide Perovskites

Ultrafast initial relaxation of hot electrons and holes in tetrahedral semiconductors via deformation potential interaction: Theory and experiment

1990 ◽  
Vol 57 (26) ◽  
pp. 2838-2840 ◽  
Author(s):  
Stefan Zollner ◽  
Sudha Gopalan ◽  
Miquel Garriga ◽  
Josef Humlíček ◽  
Luis Viña ◽  
...  
Keyword(s):  
Potential Interaction ◽  
Hot Electrons ◽  
Deformation Potential ◽  
Interaction Theory ◽  
Tetrahedral Semiconductors ◽  
Theory And Experiment

Electrostatic optics and aberration correction in the 1940s and today

1992 ◽  
Vol 50 (1) ◽  
pp. 6-7
Author(s):  
Gertrude F. Rempfer
Keyword(s):  
Electron Microscope ◽  
Focal Point ◽  
Focal Length ◽  
High Vacuum ◽  
Electron Optics ◽  
Applied Physics ◽  
Electrostatic Lenses ◽  
Commercial Instrument ◽  
The University ◽  
Theory And Experiment

I became involved in electron optics in early 1945, when my husband Robert and I were hired by the Farrand Optical Company. My husband had a mathematics Ph.D.; my degree was in physics. My main responsibilities were connected with the development of an electrostatic electron microscope. Fortunately, my thesis research on thermionic and field emission, in the late 1930s under the direction of Professor Joseph E. Henderson at the University of Washington, provided a foundation for dealing with electron beams, high vacuum, and high voltage.At the Farrand Company my co-workers and I used an electron-optical bench to carry out an extensive series of tests on three-electrode electrostatic lenses, as a function of geometrical and voltage parameters. Our studies enabled us to select optimum designs for the lenses in the electron microscope. We early on discovered that, in general, electron lenses are not “thin” lenses, and that aberrations of focal point and aberrations of focal length are not the same. I found electron optics to be an intriguing blend of theory and experiment. A laboratory version of the electron microscope was built and tested, and a report was given at the December 1947 EMSA meeting. The micrograph in fig. 1 is one of several which were presented at the meeting. This micrograph also appeared on the cover of the January 1949 issue of Journal of Applied Physics. These were exciting times in electron microscopy; it seemed that almost everything that happened was new. Our opportunities to publish were limited to patents because Mr. Farrand envisaged a commercial instrument. Regrettably, a commercial version of our laboratory microscope was not produced.

Friedel'S law breakdown and interpretation of stacking fault images in tetrahedral semiconductors

1987 ◽  
Vol 45 ◽  
pp. 318-319
Author(s):  
Rob. W. Glaisher ◽  
A.E.C. Spargo
Keyword(s):  
Relative Phase ◽  
Point Group ◽  
Binary Compound ◽  
Stacking Fault ◽  
Fold Axis ◽  
Atom Pair ◽  
Tetrahedral Semiconductors ◽  
Group Symmetries ◽  
Thin Crystal ◽  
Phase Differences

Images of <11> oriented crystals with diamond structure (i.e. C,Si,Ge) are dominated by white spot contrast which, depending on thickness and defocus, can correspond to either atom-pair columns or tunnel sites. Olsen and Spence have demonstrated a method for identifying the correspondence which involves the assumed structure of a stacking fault and the preservation of point-group symmetries by correctly aligned and stigmated images. For an intrinsic stacking fault, a two-fold axis lies on a row of atoms (not tunnels) and the contrast (black/white) of the atoms is that of the {111} fringe containing the two-fold axis. The breakdown of Friedel's law renders this technique unsuitable for the related, but non-centrosymmetric binary compound sphalerite materials (e.g. GaAs, InP, CdTe). Under dynamical scattering conditions, Bijvoet related reflections (e.g. (111)/(111)) rapidly acquire relative phase differences deviating markedly from thin-crystal (kinematic) values, which alter the apparent location of the symmetry elements needed to identify the defect.

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