In-Plane Epitaxial Growth of Self-Assembled Ge Nanowires on Si Substrates Patterned by a Focused Ion Beam

2011 ◽  
Vol 11 (7) ◽  
pp. 3190-3197 ◽  
Author(s):  
I. Carmen Marcus ◽  
Isabelle Berbezier ◽  
Antoine Ronda ◽  
M. Isabel Alonso ◽  
Miquel Garriga ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Self Assembled

Electronic Properties of Bismuth Nanowires

2001 ◽  
Vol 679 ◽  
Author(s):  
Stephen B. Cronin ◽  
Yu-Ming Lin ◽  
Oded Rabin ◽  
Marcie R. Black ◽  
Gene Dresselhaus ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Band Structure ◽  
Temperature Dependence ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Bismuth Nanowires ◽  
Bi Nanowire ◽  
Anodic Alumina Templates

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

scholarly journals Focused ion beam milling of self-assembled magnetic superstructures: an approach to fabricate nanoporous materials with tunable porosity

2018 ◽  
Vol 5 (6) ◽  
pp. 1211-1218 ◽  
Author(s):  
Verner Håkonsen ◽  
Gurvinder Singh ◽  
Jianying He ◽  
Zhiliang Zhang
Keyword(s):  
Porous Materials ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanoporous Materials ◽  
Porous Network ◽  
Novel Approach ◽  
Self Assembled ◽  
Focused Ion Beam Milling

Focused ion beam milling of self-assembled magnetic superstructures is demonstrated as a novel approach to fabricate porous materials with tunable porosity. During exposure to the ion beam, nanoparticles in the superstructure are subjected to combined milling and melting, thus merging together into a porous network.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Ge dot organization on Si substrates patterned by focused ion beam

2004 ◽  
Vol 85 (26) ◽  
pp. 6401-6403 ◽  
Author(s):  
A. Karmous ◽  
A. Cuenat ◽  
A. Ronda ◽  
I. Berbezier ◽  
S. Atha ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates

Fabricating Two-Dimensional Metal Nanocrystal Arrays Using Pulsed-Laser Deposition and Focused Ion-Beam Technologies

2000 ◽  
Vol 636 ◽  
Author(s):  
Richard F. Haglund ◽  
Robert A. Weller ◽  
Cynthia E. Heiner ◽  
Matthew D. McMahon ◽  
Robert H. Magruder ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Surfaces ◽  
Silver Nanoclusters ◽  
Laser Evaporation ◽  
Si Substrates

AbstractWe describe recent experiments in which we attempted the initial steps for fabricating twodimensional arrays of metal nanocrystals. We use a commercial pulsed-laser deposition system in concert with a focused ion beam to attempt control over both lateral and vertical dimensions at the nanometer length scale. In our experiments, regular arrays of holes typically 80 nm in diameter were drilled in Si substrates using the focused ion beam. Silver atoms were then deposited onto these substrates by pulsed laser evaporation from a metallic target in high vacuum. Under certain conditions of substrate temperature, laser pulse repetition rate, and fluence, small silver nanoclusters form preferentially around the structures previously etched in the silicon surfaces by the focused ion beam.

Sub-Micron Selective Photoluminescence in Porous Si by Focused Ion Beam Implantation

1992 ◽  
Vol 281 ◽  
Author(s):  
A. J. Steckl ◽  
J. Xu ◽  
H. C. Mogul ◽  
S. Mogren
Keyword(s):  
Incubation Time ◽  
Focused Ion Beam ◽  
Hole Concentration ◽  
Ion Beam ◽  
Porous Si ◽  
Strong Function ◽  
Si Substrates ◽  
Si Doping ◽  
Broad Beam ◽  
First Time

ABSTRACTThe effect of Si doping on the formation of stain-etched porous Si and its photoluminescent properties was studied. Porous Si is obtained by purely chemical etching of crystalline Si in a solution of HF:HNO3:H2O in the ratio of 1:3:5. We have observed that an incubation time (ti) exists between the insertion of Si into the solution and the onset of porous Si production. This incubation time was found to be a strong function of hole concentration in both n- and p-Si. In p-Si, the ti decreased rapidly with increasing conductivity, whereas for n-Si the opposite (but not as pronounced) trend was found to be the case. For example in (B-doped) p-Si, ti, is only ∼0.5 min for 250 (Ω-cm)−1 but increases to ∼ 5 min for 0.2 (Ω-cm)−1. In (P-doped) n-Si substrates ti was ∼ 8 min for 0.2 (Ω-cm)−1 increasing to ∼ 10 min for 7 (Ω-cm)−1. Photoluminescence (PL) measurements of the porous Si obtained on substrates of various conductivity (p and n) show similar spectra, namely a peak at around 1.94 eV with a full width at half-maximum (FWHM) of about 0.5 eV. Based on the ti difference, we have fabricated localized photoemitting porous Si patterns by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam (BB) implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, sub-micron photoemitting patterns have been obtained for the first time.

Development of a Refractory Hexagonal Closed Packed High Entropy Alloy Based on Thin Film Screening

MRS Advances ◽  
2019 ◽  
Vol 4 (25-26) ◽  
pp. 1435-1440
Author(s):  
Azin Akbari ◽  
T. John Balk
Keyword(s):  
Thin Film ◽  
Single Phase ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Entropy Alloy ◽  
Electron Backscattered Diffraction ◽  
X Ray ◽  
High Entropy ◽  
Si Substrates ◽  
Hexagonal Closed Packed

In order to identify candidate high entropy alloys (HEAs) that have the hexagonal closed packed crystal structure, gradient thin films in the OsRuWMoRe system were deposited by sputtering from multiple elemental targets onto Si substrates. In addition to having compositional gradients, the films exhibited regions with different phases, some of which were single-phase and non-equiatomic. Such alloys have the potential to exhibit properties superior to the primarily equiatomic HEAs that have been the focus of most work in this area. To screen the phases that exist across the thin film gradient samples, a range of characterization techniques were employed, including focused ion beam and scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray diffraction and electron backscattered diffraction analysis. The combinatorial method described in this study enabled the identification of a candidate single-phase HEA that was subsequently fabricated as a bulk alloy.

Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)

2012 ◽  
Vol 14 (2) ◽  
Author(s):  
K. Das ◽  
S. Das ◽  
R. K. Singha ◽  
S. K. Ray ◽  
A. K. Raychaudhuri
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Self Assembled
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