(SiC)x(AlN)1−xSolid-Solution Substrate for High Temperature and High Power Devices

2010 ◽  
Vol 10 (8) ◽  
pp. 3508-3514 ◽  
Author(s):  
Narsingh B. Singh ◽  
Brian Wagner ◽  
Andre Berghmans ◽  
David J. Knuteson ◽  
Sean McLaughlin ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Power Devices

scholarly journals Modeling of gallium nitride transistors for high power and high temperature applications

2020 ◽  
Author(s):  
◽  
Samira Shamsir
Keyword(s):  
High Temperature ◽  
Analytical Model ◽  
High Power ◽  
Research Work ◽  
Device Simulation ◽  
Device Modeling ◽  
Power Devices ◽  
Power Transistors ◽  
Spice Model ◽  
Temperature Applications

Wide bandgap (WBG) semiconductors such as GaN and SiC are emerging as promising alternatives to Si for new generation of high efficiency power devices. GaN has attracted a lot of attention recently because of its superior material properties leading to potential realization of power transistors for high power, high frequency, and high temperature applications. In order to utilize the full potential of GaN-based power transistors, proper device modeling is essential to verify its operation and improve the design efficiency. In this view, this research work presents modeling and characterization of GaN transistors for high power and high temperature applications. The objective of this research work includes three key areas of GaN device modeling such as physics-based analytical modeling, device simulation with numerical simulator and electrothermal SPICE model for circuit simulation. The analytical model presented in this dissertation enables understanding of the fundamental physics of this newly emerged GaN device technology to improve the operation of existing device structures and to optimize the device configuration in the future. The numerical device simulation allows to verify the analytical model and study the impact of different device parameters. An empirical SPICE model for standard circuit simulator has been developed and presented in the dissertation which allows simulation of power electronic circuits employing GaN power devices. The empirical model provides a good approximation of the device behavior and creates a link between the physics-based analytical model and the actual device testing data. Furthermore, it includes an electrothermal model which can predict the device behavior at elevated temperatures as required for high temperature applications.

Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications

2011 ◽  
Vol 324 ◽  
pp. 46-51 ◽  
Author(s):  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Herve Morel ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Power ◽  
Schottky Diodes ◽  
Wide Bandgap ◽  
Power Devices ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Bandgap Materials ◽  
Temperature Applications

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
Semiconductor Laser ◽  
High Power ◽  
Temperature Characteristic ◽  
Laser Array ◽  
Power Semiconductor

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

LTCC Embedding of SiC Power Devices for High Temperature Applications over 400 °C

2020 ◽  
Author(s):  
Benjamin Bayer ◽  
Mario Groccia ◽  
Hoang Linh Bach ◽  
Christoph Friedrich Bayer ◽  
Andreas Schletz ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Temperature Applications
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