Molecular Characterization of Polymer and Polymer Blend Surfaces. Combined Sum Frequency Generation Surface Vibrational Spectroscopy and Scanning Force Microscopy Studies

1999 ◽  
Vol 32 (11) ◽  
pp. 930-940 ◽  
Author(s):  
D. H. Gracias ◽  
Z. Chen ◽  
Y. R. Shen ◽  
G. A. Somorjai
Keyword(s):  
Molecular Characterization ◽  
Vibrational Spectroscopy ◽  
Polymer Blend ◽  
Scanning Force Microscopy ◽  
Sum Frequency Generation ◽  
Sum Frequency ◽  
Force Microscopy ◽  
Scanning Force ◽  
Blend Surfaces

Detection of Immobilized Protein on Latex Microspheres by IR−Visible Sum Frequency Generation and Scanning Force Microscopy

Langmuir ◽  
2003 ◽  
Vol 19 (9) ◽  
pp. 3563-3566 ◽  
Author(s):  
Telly S. Koffas ◽  
Joonyeong Kim ◽  
Christopher C. Lawrence ◽  
Gabor A. Somorjai
Keyword(s):  
Scanning Force Microscopy ◽  
Sum Frequency Generation ◽  
Sum Frequency ◽  
Force Microscopy ◽  
Scanning Force ◽  
Frequency Generation

Characterization of metal decorated protein templates by scanning electron/scanning force microscopy and microanalysis

2004 ◽  
Vol 36 (8) ◽  
pp. 720-723 ◽  
Author(s):  
Wilhelm Habicht ◽  
Silke Behrens ◽  
Jin Wu ◽  
Eberhard Unger ◽  
Eckhard Dinjus
Keyword(s):  
Scanning Force Microscopy ◽  
Force Microscopy ◽  
Scanning Force ◽  
Scanning Electron

scholarly journals The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

2012 ◽  
Vol 3 ◽  
pp. 722-730 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Xavier Obradors ◽  
Carmen Ocal
Keyword(s):  
Memory Effect ◽  
Scanning Probe Microscopy ◽  
Electrical Characterization ◽  
Scanning Force Microscopy ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Versatile Tool ◽  
Scanning Force ◽  
Memristor Device

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.

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