scholarly journals Atomic Layer Deposition of Undoped TiO2 Exhibiting p-Type Conductivity

2015 ◽  
Vol 7 (9) ◽  
pp. 5134-5140 ◽  
Author(s):  
Andrei T. Iancu ◽  
Manca Logar ◽  
Joonsuk Park ◽  
Fritz B. Prinz
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Type Conductivity ◽  
Undoped Tio2 ◽  
Layer Deposition ◽  
P Type

scholarly journals Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

2020 ◽  
Vol 3 (10) ◽  
pp. 10200-10208
Author(s):  
Vincent Vandalon ◽  
Marcel A. Verheijen ◽  
Wilhelmus M. M. Kessels ◽  
Ageeth A. Bol
Keyword(s):  
Atomic Layer Deposition ◽  
Carrier Density ◽  
Atomic Layer ◽  
Layer Deposition ◽  
P Type

Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

2014 ◽  
Vol 26 (21) ◽  
pp. 6088-6091 ◽  
Author(s):  
Jeong Hwan Han ◽  
Yoon Jang Chung ◽  
Bo Keun Park ◽  
Seong Keun Kim ◽  
Hyo-Suk Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
P Type

Single material TiO 2 thin film by atomic layer deposition for antireflection and surface passivation applications on p-type c-Si

2018 ◽  
Vol 451 ◽  
pp. 121-127 ◽  
Author(s):  
Tsung-Cheng Chen ◽  
Tsuo-Chuan Yang ◽  
Hsyi-En Cheng ◽  
Ing-Song Yu ◽  
Zu-Po Yang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Type C ◽  
P Type ◽  
Single Material

Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

2019 ◽  
Vol 257 (2) ◽  
pp. 1900472 ◽  
Author(s):  
Elzbieta Guziewicz ◽  
Tomasz Aleksander Krajewski ◽  
Ewa Przezdziecka ◽  
Krzysztof P. Korona ◽  
Nikodem Czechowski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Type Material ◽  
Layer Deposition ◽  
P Type

Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique

2005 ◽  
Vol 483-485 ◽  
pp. 701-704 ◽  
Author(s):  
Maciej Wolborski ◽  
Mietek Bakowski ◽  
Viljami Pore ◽  
Mikko Ritala ◽  
Markku Leskelä ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Oxides ◽  
Al2o3 Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Capacitance Voltage ◽  
P Type ◽  
Titanium Oxide Films

Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001} substrates, with doping 6×1015cm-3 and 2×1016cm-3, respectively, and on 1.2 kV PiN 4H SiC diodes for passivation studies. The Al2O3 and SiC interface was characterised for the existence of an effective negative charge with a density of 1×1012-2×1012 cm-2. The dielectric constant of Al2O3 as determined from capacitance-voltage data was about 8.3. The maximum electric field supported by the Al2O3 film was up to 7.5 MV/cm and 8.4 MV/cm on SiC and Si, respectively.

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

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